Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják, F.; Nagy, Krisztina; Lobotka, P.; Radnóczi, G.

doi:10.1063/1.4893718

Cited by 23 publications

(16 citation statements)

References 26 publications

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“…Figure 7 shows the yttrium addition and annealing temperature effects on the CuMn film temperature coefficient of resistivity. Misjaḱ et al reported that TCR shows a negative value after Mn added at amounts higher than 20% to Cu because of the presence of disordered structures that lead to lower conductivity [9]. It was found that the TCR changes signi cantly from a positive value to negative value with increasing yttrium content at annealing temperatures from 250°C to 350°C.…”

Section: Resultsmentioning

confidence: 99%

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The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

Lee

2019

Advances in Materials Science and Engineering

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In this study, we fabricated thin-film resistors using CuMn and yttrium targets by DC/RF magnetron cosputtering. CuMnYresistive thin films were deposited onto glass and Al 2 O 3 substrates. e electrical properties and microstructures of CuMn alloy films with different yttrium content were investigated. e CuMnY films were annealed at temperature ranging from 250°C to 350°C in N 2 atmosphere. e phase variation, microstructure, film thickness, and constitutional analysis of CuMnY films were characterized using X-ray diffraction, field emission scanning, and high-resolution transmission electron microscopy and related energy dispersive X-ray analyses (XRD, FESEM, and HRTEM/EDX). It was found that CuMnY alloy films separated into two parts after annealing. e first part is the MnO phase on the bottom side of the film. e second part is an amorphous structure on the upper side of the film. e MnO phase is a microcrystalline that exists in CuMn films, which is dependent on the Y content and annealing temperature. CuMn alloy films with 15.7% yttrium addition annealed at 300°C exhibited higher resistivity ∼4000 μΩ-cm with − 41 ppm/°C of temperature coefficient of resistance (TCR).

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Section: Resultsmentioning

confidence: 99%

“…e specific resistivity of CuMn films was measured over the whole composition range [9]. e resistivity of pure manganese and copper films was 174 μΩ-cm and 1.7 μΩ-cm, respectively.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

Lee

2019

Advances in Materials Science and Engineering

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“…Misjak et al reported on the specific resistivity of Cu-Mn films, which they measured over the whole composition range [8]. The resistivities of pure Cu and Mn films were 1.7 µΩ•cm and 174 µΩ•cm, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…The resistivities of pure Cu and Mn films were 1.7 µΩ•cm and 174 µΩ•cm, respectively. The curve increased monotonically when the Mn content was 0-80 at.%, with a maximum of 205 µΩ•cm at 80 at.% Mn that corresponds to a temperature coefficient of resistance (TCR) of −308 ppm/ • C [8]. Focusing on the electrical properties of Cu 0.5 -Mn 0.5 alloy films, the resistivity was about 137 µΩ•cm with a TCR of −377 ppm/ • C. However, the TCR value was too high, which would have to be improved for applications in mobile electronic devices.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Lee

et al. 2019

Coatings

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Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

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“…Study on the electrical transport of metallic thin lms is of high interest to researchers and of great importance to the development of microelectronic systems. [1][2][3][4][5][6][7][8] With the increase in the device density of ultra-large-scale-integrated (ULSI) and giga-scale-integrated (GSI) circuits, the characteristic scale of the interconnecting wires, taken as the thickness of nanolms, is constantly decreasing and is comparable to the electron mean free path (MFP) of the corresponding bulk materials. As a result, the phenomenon that the electrical resistivity of thin metallic lm increases dramatically with decreasing lm thickness can be observed.…”

Section: Introductionmentioning

confidence: 99%