Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operation

Morizuka, K.; Katoh, R.; Tsuda, Koji; Asaka, M.; Iizuka, Norio; Obara, M.

doi:10.1109/55.9279

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1998

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Cited by 20 publications

(2 citation statements)

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“…The base widening starts abruptly [6,7,8,9] and behaves approximately inversley proportional to the collector current Ic, for IC beyond an onset current Ik. The effect on base transit time is given by 2 WB 77 DB with the effective base width WB, the electron diffusion constant in the base DB and a factor rj that describes the electron drift in the base.…”

Section: Introductionmentioning

confidence: 99%

New GaInP/GaAS-HBT Large-Signal Model for Power Applications

Rudolph

Doemer

Heymann

1998

28th European Microwave Conference, 1998

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Section: Introductionmentioning

confidence: 99%

New GaInP/GaAS-HBT Large-Signal Model for Power Applications

Rudolph

Doemer

Heymann

1998

28th European Microwave Conference, 1998

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“…It is therefore of utmost importance to understand the high current density phenomena, i.e., the velocity overshoot and the base push out (Kirk) effect (1). The electron average velocity in the collector depletion region of GaAs HBTs in the high current density regime was previously estimated from the value of F, obtained from s-parameter measurements (2)(3).…”

Section: Introductionmentioning

confidence: 99%

Measurement of high current density phenomena and velocity overshoot in InP/GaInAs HBTs

Betser

Ritter²

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials

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Electron transport in the collector of InP/GaInAs heterojunction bipolar transistors (HBTs) was experimentally studied in the high current density regime. The average velocity of electrons in the collector was obtained as a function of the collector current density and base collector voltage, and found to be larger than the saturation velocity. Phenomena caused by the base push out (Kirk) effect were observed. It is demonstrated that below the onset of the Kirk effect the injected electron space charge in the collector improved the high frequency performance of the HBT. A new result presented is that the average electron velocity in the collector exhibited a maximum when plotted versus the base collector voltage.

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High-Speed Devices and Integrated Circuits

Požela

1993

Physics of High-Speed Transistors

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Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operation

Cited by 20 publications

References 6 publications

New GaInP/GaAS-HBT Large-Signal Model for Power Applications

New GaInP/GaAS-HBT Large-Signal Model for Power Applications

Measurement of high current density phenomena and velocity overshoot in InP/GaInAs HBTs

High-Speed Devices and Integrated Circuits

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