New GaInP/GaAS-HBT Large-Signal Model for Power Applications

Abstract

A new GaInP/GaAs HBT model for power applications is presented. It is based on the GUMMEL-POON model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs.

Xyce™ Parallel Electronic Simulator Reference Guide, Version 7.5

“…For a more thorough description of p-n junction physics, see [9]. For a thorough description of the U.C.…”

An empirical HBT Large Signal Model for CAD

“…In order to use the fact that when keeping Ib constant the junction voltages varies linearly with the temperature, we can modify diode current definition. It is a common practice to describe the complicated Ib dependence by several diodes (respective exponential functions) in order to improve the accuracy and describe the different physical phenomena occurring in the device [1][2][3][4][5][6][7][8][9][10][11][12]. According to the device physics we use an exponential function to describe the semiconductor junction, but the reference point is changed to v b j above the knee voltage at currents where we normally operate the device.…”

“…The model'was implemented as a SDD in MDS (Agilent) with a selfcbcdi' = cbcp + -ckO. (l + tanh[ch20 + ch21'ybc1), (9) heating and delay part and was experimentally evaluated Integrating with the terminal voltages we can obtain the using DC, S-parameter and Power Spec" where Ptot is the dissipated power, Rhem is the thermal resistance. For higher accuracy Rth can be made temperature dependent.…”