Influence of 2 GHz harmonic load-pull on HBT and MESFET output power and efficiency

Rudolph, Matthias; Lenk, F.; Doerner, Ralf; Heymann, P.

doi:10.1109/mwsym.1999.779866

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…Using an active harmonic load pull system, the large signal microwave performance of the AlGaN/GaN HEMTs was evaluated for the 2 GHz frequency band [5]. The maximum output power for devices having a different number of transistor fingers was compared.…”

mentioning

confidence: 99%

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Lossy

Hilsenbeck

Würfl

et al. 2001

phys. stat. sol. (a)

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mentioning

confidence: 99%

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Lossy

Hilsenbeck

Würfl

et al. 2001

phys. stat. sol. (a)

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“…Much work has been devoted to the enhancement of power added efficiency (P AE) [2] via optimization of the second hannonic termination impedance, but the effect of second hannonic tuning on linearity is not well established.…”

Section: Introductionmentioning

confidence: 99%

Prediction of harmonic tuning performance in pHEMTs

Varanasi¹,

Baylis²,

Dunleavy³

et al.

The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005.

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Ah.ftract -This paper focuses on the characterization and optimization of microwave power transistors using a comme rcial on-wafer harmonic load pull system . Specific attention is paid to the output tuning of the second hannonic impedance presented to the device. The ability to quantifY the level of accuracy in a load puD system is explored by using \'arious calibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2nd harmonic for best performance.

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“…Of significant interest in the design and optimization of a power amplifier is the performance under varying second harmonic terminations, which can have an impact on the linearity and power capabilities of a device. Much work has been devoted to the enhancement of poweradded efficiency (PAE) [2] via optimization of the second harmonic termination impedance, but the effect of second harmonic tuning on linearity is not well established. Therefore, for the purposes of this paper, the effects of 2fo tuning on the linearity figure of merit, Lip3 is explored.…”

Section: Introductionmentioning

confidence: 99%

Prediction of harmonic tuning performance in pHEMTs

Varanasi¹,

Baylis²,

Dunleavy³

et al.

The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005.

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This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer hannonic load. pull system. Specific attention is paid to the output tuning of the second harmonic impedance prese nted to the device. The ability to quantify the level of accuracy in a load pull system is IXplored by using various c alibration validation methods. Experiments and simulation comparisons are described for a GaAs pHEMT and a GaAs HJFET. The measured harmonic load pull data pointed to different guidance on how one would match the 2"d harmonic for best performance.

show abstract

Influence of 2 GHz harmonic load-pull on HBT and MESFET output power and efficiency

Cited by 4 publications

References 6 publications

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Prediction of harmonic tuning performance in pHEMTs

Prediction of harmonic tuning performance in pHEMTs

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