Electron spin dynamics in cubic GaN

Buß, J. H.; Schupp, T.; As, D. J.; Brandt, O.; Hägele, D.; Rudolph, J.

doi:10.1103/physrevb.94.235202

Cited by 12 publications

(9 citation statements)

References 78 publications

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“…On the high‐energy wing of that peak, we find a very weak shoulder, which we determine to be a conduction band‐acceptor transition (e − A 0 ) . The position of e − A 0 at 3.16 eV as well as the D 0 A 0 position are in agreement with previous studies . We describe the line shape of this contribution by the same model as the line shapes for the high‐doping samples (

D (E) \times f_{normale} (E)

).…”

Section: Resultssupporting

confidence: 87%

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Baron

Goldhahn

Deppe

et al. 2019

Physica Status Solidi (b)

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An investigation of different n‐type doped zincblende gallium nitride thin films measured by photoluminescence from 7 K to room temperature is presented. The spectra change with increasing free‐carrier concentration due to many‐body effects such as the Burstein–Moss shift and band‐gap renormalization. The samples are grown by molecular beam epitaxy on a 3C‐SiC/Si (001) substrate, and a free‐carrier concentration above 1020 cm−3 is achieved by introducing germanium as a donor. The analysis of the measured spectra by a line‐shape fit yields different transition processes for different doping concentrations and temperatures, such as a band–band transition and a band–acceptor transition. The conduction band dispersion of Kane's model is perfectly suited to explain the experimental data quantitatively.

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D (E) \times f_{normale} (E)

).…”

Section: Resultssupporting

confidence: 87%

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Baron

Goldhahn

Deppe

et al. 2019

Physica Status Solidi (b)

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“…Relaxation of the x -component of spin should thus be governed by other processes such as Eliott-Yafet (EY) mechanism 29 . EY spin relaxation time can be estimated to be of the order of a few s in this case 42 , 43 . This assertion of zero rate of DP spin relaxation for x component of spin is strictly valid when a single subband is occupied.…”

Section: Summary Of Main Results and Discussionmentioning

confidence: 96%

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

Deb

Dhar

2021

Sci Rep

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A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

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“…We exclude the possibility of the spin origin from itinerant electrons and attribute it to localized electrons by laser wavelength and temperature dependence measurements. Localized electrons in Ga-doped ZnO bulk crystals show advantages in room-temperature spin coherence as compared with other traditional III-V and II-VI bulk semiconductors, both doped and undoped [8][9][10][11][12][13][14][15][16], where shorter spin coherence time has been reported at room temperature (e.g., ~110 ps in bulk GaAs [8], ~100 ps in bulk wurtzite GaN [10], ~2.5 ns in bulk cubic GaN [11], and ~60 ps in bulk CdTe [12]) or long-lived spin coherence has been typically reported at low temperature.…”

mentioning

confidence: 99%

Long-lived electron spin coherence in Ga-doped ZnO at room temperature

Jiang

Guo

et al. 2021

Phys. Rev. B

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Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns at room temperature. Through the dependence measurements of laser wavelength and temperature, the room-temperature long-lived spin signal is attributed to localized electrons. The spin dephasing (relaxation) processes are independent of transverse (longitudinal) magnetic fields, indicating the spin dephasing not resulting from the g-factor inhomogeneity and electron-nuclear hyperfine interaction. It reveals that the two spin dephasing processes originate from two types of localized electrons, both of which are dominated by the anisotropic exchange Dzyaloshinskii-Moriya interaction between adjacent localized electrons.

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Electron spin dynamics in cubic GaN

Cited by 12 publications

References 78 publications

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

Long-lived electron spin coherence in Ga-doped ZnO at room temperature

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