Electron spin resonance centers associated with oxygen precipitates in Czochralski silicon crystals

Koizuka, Masaaki; Yamada-Kaneta, Hiroshi

doi:10.1063/1.1305325

Cited by 17 publications

(14 citation statements)

References 8 publications

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“…Techniques such as EDMR and electron spin resonance (ESR) have shown recombination at oxide precipitates includes contribution from P b0 and P b1 dangling bonds. 25,47 Gerardi et al found P b0 to have states at E V þ 0.3 eV and E V þ 0.85 eV, 48 so the first of these could be associated with our Defect 2 and the second with our Defect 1. Levels associated with P b1 defects have been the matter of intense debate.…”

Section: Possible Origins Of the Defectsmentioning

confidence: 72%

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

Murphy

Bothe

Krain

et al. 2012

Journal of Applied Physics

113

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Injection-dependent minority carrier lifetime measurements are a valuable characterisation method for semiconductor materials, particularly those for photovoltaic applications. For a sample containing defects which obey Shockley-Read-Hall statistics, it is possible to use such measurements to determine (i) the location of energy levels within the band-gap and (ii) the ratios of the capture coefficients for electrons and holes. In this paper, we discuss a convenient methodology for determining these parameters from lifetime data. Minority carrier lifetime is expressed as a linear function of the ratio of the total electron concentration to the total hole concentration for p-type (or vice versa for n-type) material. When this is plotted on linear scales, a single-level Shockley-Read-Hall centre manifests itself as a straight line. The gradient and intercepts of such a plot can be used to determine recombination parameters. The formulation is particularly instructive when multiple states are recombination-active in a sample. To illustrate this, we consider oxide precipitates in silicon as a case study and analyse lifetime data for a wide variety of p-type and n-type samples as a function of temperature. We fit the data using both a single two-level defect and two independent single-level defects and find the latter can fit the lifetime curves in all cases studied. The first defect is at E V þ 0.22 eV and has a capture coefficient for electrons $157 times greater than that for holes at room temperature. The second defect is at E C À 0.08 eV and has a capture coefficient for holes $1200 times greater than that for electrons at room temperature. We find that the presence of dislocations and stacking faults around the precipitates acts to increase the density of both states without introducing new levels. Using the analysis method described, we present a parameterisation of the minority carrier lifetime in silicon containing oxide precipitates. V

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Section: Possible Origins Of the Defectsmentioning

confidence: 72%

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

Murphy

Bothe

Krain

et al. 2012

Journal of Applied Physics

113

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“…29,30 Dangling bond centres can be passivated with hydrogen, 31 and hydrogen passivation is likely to occur during cell processing. The recombination that occurs in a completed solar cell due to oxygen precipitation is therefore likely to arise from small concentrations of impurities segregated to the precipitates and surrounding defects.…”

Section: B Competitive Getteringmentioning

confidence: 99%

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

Murphy

McGuire

Bothe

et al. 2014

Journal of Applied Physics

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Experiments have been conducted to understand the behaviour of iron in silicon containing oxide precipitates and associated defects (dislocations and stacking faults), which is subjected to phosphorus diffusion gettering. Injection-dependent minority carrier lifetime measurements are analysed to provide quantitative information on the degree to which the precipitates and associated defects are decorated with iron impurities. These data are correlated with bulk iron measurements based on the photodissociation of FeB pairs. Iron in the vicinity of oxide precipitates in samples with relatively low levels of bulk iron contamination (< 5 × 1012 cm−3) can be gettered to some extent. Higher levels of bulk iron contamination (> 1.2 × 1013 cm−3) result in irreversible behaviour, suggesting iron precipitation in the vicinity of oxide precipitates. Bulk iron is preferentially gettered to the phosphorus diffused layer opposed to the oxide precipitates and associated defects.

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“…5b, from which the energy levels of E c -0.40 eV and E c -0.24 eV as well as the capture crosssections of 1.8 9 10 -15 and 9.6 9 10 -16 cm 2 are derived for P1 and P2 levels, respectively. Koizuka and YamadaKaneta found that the so-called P b0 centers generated at the oxygen precipitate/Si interfaces are associated with the E C -0.25 eV level [15,16]. Regarding the E C -0.40 eV level, it was often observed for the dislocation-containing silicon [24][25][26][27].…”

Section: Methodsmentioning

confidence: 93%

“…Understandably, such charges may also exist in the SiO x -Si systems associated with OP in CZ silicon. Moreover, the SiO x /Si interface states may introduce deep levels in the bandgap of silicon [15][16][17]. In this context, the recombination and transportation of carriers in CZ silicon are inevitably influenced by OP.…”

Section: Introductionmentioning

confidence: 99%

On the mechanism of carrier scattering at oxide precipitates in Czochralski silicon

Dong

Liang²,

Tian

et al. 2015

J Mater Sci: Mater Electron

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Oxygen precipitation (OP) in Czochralski (CZ) silicon has been extensively and intensively studied in the past decades due to its significance for improving manufacturing yield of integrated circuits. Nevertheless, how OP affects the carrier transportation in CZ silicon has hardly been addressed. Here, we report that the carrier mobility is decreased to a certain extent while the carrier concentration is nearly unchanged due to significant OP in CZ silicon. Interestingly, such a decrease in mobility can be offset by copper (Cu) decoration of oxygen precipitates via Cu drive-in anneal at appropriate temperatures. It is clarified that the charges associated with the oxygen precipitate/silicon interface states exert additional scattering effect on the carrier transportation, leading to the decrease of carrier mobility as mentioned above. We believe that the present work gains an insight into OP in CZ silicon from the electrical point of view.

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Electron spin resonance centers associated with oxygen precipitates in Czochralski silicon crystals

Abstract: Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal

Cited by 17 publications

References 8 publications

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

On the mechanism of carrier scattering at oxide precipitates in Czochralski silicon

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