Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

Somers, P; Stesmans, André; Souriau, Laurent; Afanasʼev, Valeri

doi:10.1063/1.4748313

Cited by 8 publications

(2 citation statements)

References 100 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, Stesmans et al [348,349] have observed the Ge P b state center by ESR in Ge-Si alloys, in the 60-80% Ge composition range. Baldovino [350,351] have observed the Ge P b by optical detected magnetic resonance at Ge/GeO 2 interfaces.…”

Section: Ge Dangling Bondmentioning

confidence: 99%

High-K materials and metal gates for CMOS applications

Robertson

Wallace

2015

Materials Science and Engineering: R: Reports

629

367

View full text Add to dashboard Cite

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current becomes too large. This led to the replacement of SiO 2 by a physically thicker layer of a higher dielectric constant or 'high-K' oxide such as hafnium oxide. Intensive research was carried out to develop these oxides into high quality electronic materials. In addition, the incorporation of Ge in the CMOS transistor structure has been employed to enable higher carrier mobility and performance. This review covers both scientific and technological issues related to the high-K gate stack-the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging to achieve the thinnest oxide thicknesses. The high K oxides were implemented in conjunction with a replacement of polcryslliane Si gate electrodes with metal gates. The strong metallurgical interactions between the gate electrodes and the HfO 2 which resulted an unstable gate threshold voltage resulted in the use of the lower temperature 'gate last' process flow, in addition to the standard 'gate first' approach. Work function control by metal gate electrodes and by oxide dipole layers is discussed. The problems associated with high K oxides on Ge channels are also discussed. Glossary ALD atomic layer deposition CB conduction band CBO conduction band offset CMOS complimentary metal oxide semiconductor CNL charge neutrality level CV capacitance voltage CVD chemical vapour deposition DB dangling bond DOS density of states EA electron affinity ECT equivalent capacitance thickness EOT equivalent oxide thickness ESR electron spin resosnance EWF effective work function FET field effect transistor GGA generalised gradient approximation LDA local density approximation MEIS medium energy ion scattering MIGS metal induced gap states MOCVD metla organic chemical vapour deposition MOS metal oxide semiconductor MOSFET metal oxide semiconductor field effect transistor MOx arbitrary metal oxide NMOS n-type MOS PMOS p-type MOS RCS remote Coulombic scattering RPS remote phonon scattering SBH Schottky barrier height TAT trap assisted tunnelling T inv inversion thickness Vt threshold voltage (of FET) Vfb flat band voltage VB valence band VBO valence band offset WF work function

show abstract

Section: Ge Dangling Bondmentioning

confidence: 99%

High-K materials and metal gates for CMOS applications

Robertson

Wallace

2015

Materials Science and Engineering: R: Reports

629

367

View full text Add to dashboard Cite

show abstract

“…In this context, solid evidence of the Ge DB at the Ge(001)/Ge oxide interface has been recently reported [11,12]. Electrically detected magnetic resonance (EDMR) spectroscopy revealed a nontrigonal symmetry of the Ge DB at the (001) oriented interface with its elemental oxide, therein resembling a similar finding at the ð001ÞSi x Ge 1Àx =SiO 2 interface [13,14], which, however, shows a different point symmetry. The lack of experimental evidence reporting a trigonal DB at the Geð001Þ=GeO 2 interface is somehow surprising.…”

mentioning

confidence: 66%

Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance

Paleari

Baldovino²,

Molle³

et al. 2013

Phys. Rev. Lett.

View full text Add to dashboard Cite

Despite a renewed interest in Ge as a competitor with Si for a broad range of electronic applications, the microstructure and the electronic properties of the dangling bonds that, in analogy with Si, are expected at the Ge/oxide interface have escaped a firm spectroscopy observation and characterization. Clear evidence based on contactless electrically detected magnetic resonance spectroscopy of a dangling bond at the Geð111Þ=GeO 2 interface is reported in this Letter. This result supports the similarity between dangling bonds at the Si(111)/oxide and Ge(111)/oxide interfaces, both showing C 3v trigonal point symmetry with the main axis oriented along the h111i direction. In contrast, at the Ge(001)/oxide interface the absence of the trigonal center in favor of a lower symmetry dangling bond marks the difference with the Si(001)/ oxide interface, where both centers are present and the one having higher point symmetry prevails. This fact is rationalized in terms of suboxide interface rearrangement and oxide viscoelasticity, which promote the generation of the nonaxial centers at distorted dimers. The unambiguous identification of the centers at the Ge/oxide interfaces yields a deeper insight into the physical properties of the suboxide interface structure and offers a valid indicator for the evaluation of different surface capping and passivation techniques, with the potential to boost the Ge-related technology.

show abstract