For the first time, solid-gas reaction techniques have been used for the synthesis and processing of thin films of boron nitride. Clear to intensely colored blue BN films were grown on Si(100) substrates by the transformation of borazine (B3N,H,) with a titanium complex as initiator under flowing nitrogen gas. The thickness of the films ranged from 70 to lOOnm, as determined by Rutherford backscattering (RBS) and atomic force microscopy (AFM) analyses. The intensity of the blue color of the thin film can be correlated to its thickness. The composition of the film determined by RBS studies corresponds to the stoichiometric formula B0~49N0,4500,06r and N/B and O/B ratios are found to be 0.92 and 0.12, respectively. Nitrogen contents determined by nuclear reaction analysis agree well with the RBS results. Moreover, Auger electron spectroscopy (AES) measurements show that no titanium is present in the films and confirm the composition determined by RBS studies. X-ray photoelectron spectroscopy (XPS) shows the presence of boron and nitrogen in the blue BN film. Electron spin resonance (ESR) experiments at 293 and 12 K indicate a single broad signal with a g value (g = 2.005) close to that of a free electron. This synthetic approach provides opportunities for the preparation of new thin-film materials and for the fundamental study of solid-gas reactions.