Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide

Abstract

Radiation-induced hole trapping in reoxidized nitrided silicon dioxide (RNO) was studied with electron spin resonance spectroscopy. It is demonstrated that the dominant hole trap in RNO is not the well known E′ center of conventional oxides. This finding confirms our earlier speculation, based on detrapping experiments, that the dominant hole trap in RNO is a species distinctly different from that in conventional oxide.

Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

“…In addition, antiferromagnetic coupling of trapped electrons can occur due to the resonant tunneling of trapped electrons via the unoccupied traps. This model explained the experimental observations that no any electron paramagnetic resonance signal due to the trap-localized electrons or holes could be detected in some dielectric films with high amount of traps, such as amorphous silicon nitride ͑a-Si 3 N 4 ͒, 2-5 silicon oxynitride, 6 and silicon oxide films with silicon implantation. 7 Amorphous silicon oxide and amorphous silicon nitride are the two major dielectrics being widely used in silicon microelectronic devices.…”