Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor

Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition

“…This The departure of the temperature dependences of the paramagnetic susceptibility from the Curie law corresponds to the similar deviations we have observed previously in uncompensated Ge:As samples near the IM phase transition [6,8]. However, the FM ordering observed in compensated Ge samples has not been found in Si so far.…”

“…Studies of the magnetic properties of Ge:As near the IM phase transition [6][7][8] proved to be considerably more informative because a procedure for sample compensation by transmutation neutron doping was used. This made it possible to examine the magnetic properties of the material on a set of samples with the spin concentration varied in small steps and to demonstrate that the magnetic susceptibility χ p depends in this set not only on temperature, but also on the spin concentration and sample compensation.…”

Experimental Demonstration of Room-Temperature Spin Transport inn-Type Germanium Epilayers

“…Additionally, in recent years, significant success has been achieved in the production of a high-quality GeO 2 layer with a gate function in the n-channel Ge-based metal oxide semiconductor field effect transistor [3]. Moreover, spin injection and spin relaxation in Ge have been extensively studied using electron spin resonance [4][5][6][7][8][9] and optical techniques [10][11][12][13]. However, in spite of all the recent progress in the Ge field and in contrast to Si, spin transport in Ge using nonlocal four-terminal techniques has only been observed at low temperatures to date [14][15][16].…”

Strained germanium for applications in spintronics

“…The GeO 2 exhibits a low interfacial density of states to the bulk Ge, allowing for formation of high quality gates for control of spin and charge transport. Moreover, spin injection and spin relaxation in Ge have been extensively studied using electron spin resonance [20][21][22][23][24][25] and optical techniques [26][27][28][29]. However, in spite of all the recent progress in the Ge field and in contrast to Si, spin transport in Ge using nonlocal four-terminal techniques has only been observed at low temperatures to date [30][31][32].…”