“…In this work, the silicate glass contains silicon and boron ions, both of which are prone to produce the corresponding defects after X‐ray irradiation. As shown in Figure 2A, silicon oxygen hole center (Si‐OHC, ≡Si‐O°, g∼2.009),
25 boron oxygen hole center (B‐OHC, = B‐O°, g∼2.002),
26 and silicon dangling bond (Si‐E’, ≡Si‐, g∼2.001)
27 are found in the irradiated P0 samples. Defects are formed when X‐ray photon energy is absorbed by the glass via the following processes
25–27 :
…”