1995
DOI: 10.1016/0039-6028(95)00352-5
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Electron-stimulated oxidation of Ni(111) at low temperature

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Cited by 19 publications
(17 citation statements)
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“…It is generally agreed that at room temperature oxygen uptake on nickel surfaces first proceeds through a fast chemisorption stage, followed by a relatively slow oxidation stage, with the nickel oxide overlayer reaching a thickness of three layers at saturation. 13 We have found that electrons ͑examined from 5 eV to 2 keV͒ significantly enhance the oxidation of the Ni͑111͒ surface at 120 K, 13 accounting for the discrepancy with previous results. While there have been many studies of high temperature oxidation, studies of oxide growth on nickel surfaces at low temperatures are rather scarce, but are in general agreement that the oxide grows more rapidly than at room temperature, and that the saturation oxygen uptake is about the same as for room temperature growth, i.e., 2 or 3 layers of nickel oxide.…”
Section: Introductionmentioning
confidence: 70%
“…It is generally agreed that at room temperature oxygen uptake on nickel surfaces first proceeds through a fast chemisorption stage, followed by a relatively slow oxidation stage, with the nickel oxide overlayer reaching a thickness of three layers at saturation. 13 We have found that electrons ͑examined from 5 eV to 2 keV͒ significantly enhance the oxidation of the Ni͑111͒ surface at 120 K, 13 accounting for the discrepancy with previous results. While there have been many studies of high temperature oxidation, studies of oxide growth on nickel surfaces at low temperatures are rather scarce, but are in general agreement that the oxide grows more rapidly than at room temperature, and that the saturation oxygen uptake is about the same as for room temperature growth, i.e., 2 or 3 layers of nickel oxide.…”
Section: Introductionmentioning
confidence: 70%
“…Such a process can be strongly relevant for the fabrication of antiferromagnetic/ferromagnetic junctions, 8 and lithography techniques on Ni-based surfaces, 7 as well as Ni-oxide formation for catalysis studies. [1][2][3][4][5][6] At any rate, in order to minimize e-beam induced oxidation, and thus to probe B segregation towards the Ni 3 Al surface, the use of large beam spot sizes or sufficiently low electron fluxes ( e Ͻ10 15 e/cm 2 s) is required.…”
Section: Discussionmentioning
confidence: 99%
“…[1][2][3][4][5][6] Furthermore, these studies are important for lithography techniques in microelectronic device fabrication, 7 exchange-bias ͑ferromagnetic/antiferromagnetic͒ junctions, 8 and aerospace technology. 9,10 In particular, Ni 3 Al alloys show excellent resistance to oxidation because an adherent surface oxide film is formed that protects the base metal from excessive attack.…”
Section: Introductionmentioning
confidence: 99%
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“…Indeed, the irradiation of Ni by beams of electrons or Ar + ions during oxygen exposure enhances significantly the oxidation rate and the formation of Ni oxides. [8,14] In addition, it has been shown that the oxygen implantation represents an attractive and feasible alternative for oxidation of Ni, even at RT, [15] that could be more efficient in creating thin NiO films on Ni surfaces than oxidation by some other methods, such as electrochemical methods. [16] In addition, the composition and thickness of oxides can be finely controlled, even at RT, simply by tuning the implantation parameters, such as impact angles and energies or doses of implanted oxygen.…”
Section: Introductionmentioning
confidence: 99%