Electron transport at metal-semiconductor interfaces: General theory

Tung, R. T.

doi:10.1103/physrevb.45.13509

Cited by 1,429 publications

(1,153 citation statements)

References 71 publications

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“…4(a), the potential in the depletion region under the metal dot is greatly modified by the influence of the environmental Fermi-level pinning, resulting in the formation of a saddle point potential at depth of several 10 nm from the MS interface. This is similar to the situation in inhomogeneous Schottky interfaces discussed by Tung 7) . This potential modification should change the effective barrier height of the nano-Schottky contacts.…”

Section: Theoretical Analysis Of Electrical Propertiessupporting

confidence: 64%

Current transport and capacitance–voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

Sato

Kasai

Hasegawa

2001

Applied Surface Science

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The nanometer-sized Schottky contacts were successively fabricated on n-GaAs and n-InP substrates by the electrochemical process, and their electrical properties were characterized both experimentally and theoretically. From the detailed I-V measurements using a conductive AFM system, it was found that the current transport properties of the nanometer-sized Schottky contacts were strongly dependent on metal workfunction, however showed nonlinear log I-V characteristics with large n value in range of 1.2 -2.0 which can not be explained by 1D thermionic emission model. From the theoretical analysis using a computer simulation, it was found that this nonlinear characteristics can be explained by the 3D thermionic emission model with a due consideration of the environmental Fermi level pinning. Furthermore, the calculated C-V characteristics showed much smaller movements of the depletion layer with bias underneath the nano-Schottky contacts. These results strongly indicate the importance of controlling the environmental Fermi level pinning to improve the potential controllability of the nano-Schottky contacts.

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Section: Theoretical Analysis Of Electrical Propertiessupporting

confidence: 64%

Current transport and capacitance–voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

Sato

Kasai

Hasegawa

2001

Applied Surface Science

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“…[181] Inhomogeneities in MIS interfaces can easily dominate net transport across them. [151,152] This is found even at the nanoscopic level. Thus, the conductance of isolated styrene [27] or acetone [182] molecules, adsorbed on Si, is affected strongly by the chemical conditions of neighboring Si atoms, which act as gate for transport across the adsorbed molecules.…”

Section: Imperfections In the Monolayermentioning

confidence: 93%

“…[44,63,90,150] SBH(J 0 ) < SBH(C 0 ) suggests an inhomogeneous barrier. [151,152] Surprisingly, for Hg/alkyl-n-Si MOMS SBH(J 0 ) $SBH(C 0 )) [19,135] but this is simply because both the width of the space charge (C 0 ) and the semiconductor transport (J 0 ) saturate at similar values (strong inversion). In any case, SBH > E G /2 presents strong support for inversion.…”

Section: Extraction Of the ''Semiconductor Barrier Height'' (Sbh)mentioning

confidence: 99%

“…This sensitivity can be understood by recalling that the Schottky barrier inside the semiconductor is very sensitive to the interface dipole and to the morphology of the layer deposited on the semiconductor, as pointed out by Tung. [14,151] Actually, only defects that increase the current (exponentially, see Eq. (5)) should be cause for worry, because small areas with high barriers make a negligible contribution to the junction's overall J-V characteristics.…”

Section: Do We Measure Defects or Molecules?mentioning

confidence: 99%

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Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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“…A typical J -V characteristic of evaporated Ni-Si, SBs, with Si resistivity of [10][11][12][13][14][15][16][17][18][19][20] cm is also shown in Fig. 1 for comparison.…”

Section: Resultsmentioning

confidence: 99%

Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

Kiziroglou

Zhukov

et al. 2006

Solid State Communications

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Ni-Si Schottky barriers are fabricated by electrodeposition using n on n+ Si substrates. I -V , C-V and low temperature I -V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier proposed by Werner and Guttler [J.H. Werner, H.H. Guttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys. 69 (3) (1991) 1522-1533]. A mean value of 0.76 V and a standard deviation of 66 mV is obtained for the Schottky barrier height at room temperature with a linear bias dependence. X-ray diffraction and scanning electron microscopy measurements reveal a polycrystalline Ni film with grains that span from the Ni-Si interface to the top of the Ni layer. The variation in Ni orientation is suggested as a possible source of the spatial distribution of the Schottky barrier height.

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Electron transport at metal-semiconductor interfaces: General theory

Cited by 1,429 publications

References 71 publications

Current transport and capacitance–voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

Current transport and capacitance–voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

Molecules on Si: Electronics with Chemistry

Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers

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