Electron transport characteristics in 4H-SIC polytype under high-electric-field

Belhadji, Youcef; Bouazza, B.; El-Ouchdi, Ahmed Amine

doi:10.1109/icee-b.2017.8192009

Cited by 2 publications

(1 citation statement)

References 17 publications

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“…J Fundam Appl Sci. 2022, 14 (1), 107-115 109 polytypes, has long been known for its potential properties and outstanding resistance to harsh environments, e.g., his thermal stability, good electron transport characteristics [12], radiation resistance, and dielectric strength.…”

Section: Introductionmentioning

confidence: 99%

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

Belhadji¹

2023

J. Fundam and Appl Sci.

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The Hydrogenated nanocrystalline cubic silicon carbide (nc-3C-Si:H) based solar cell with interesting efficiency, find her place promoted in photovoltaic applications. To improve the sunlight absorption and its electrical performances, the structure of the solar cell can be optimized, combining new materials to form multi-layers solar cells. In this context, the nc-3C-SiC:H, having a wide band gap, excellent optical, electrical and structural properties is used as wide bandgap absorber layer. In this work, we report a theoretical study of new optimized nc-3C-SiC:H/ i-a-Si:H/ a-Si:H/ µc-Si solar cell using the SCAPS one dimension program. We investigate the temperature and incident light intensity effect on the DC parameters of the solar cell. For the proposed structure, optimal power conversion efficiency (PCE) of 16.89% is registered under AM1.5G spectrum at room temperature.

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Section: Introductionmentioning

confidence: 99%

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

Belhadji¹

2023

J. Fundam and Appl Sci.

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New optimized HIT solar cell using wide-bandgap nc-3C-SiC:H as a window layer

Belhadji

2023

Mod. Phys. Lett. B

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This study focuses on the investigation of HIT solar cell using nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) as a window layer. The selection of nc-3C-SiC:H is motivated by its wide bandgap, high electron drift velocity, and exceptional optical, electrical, and structural properties. Employing SCAPS-1D simulator, a comprehensive simulation analysis of thin nc-3C-SiC:H-based solar cell was conducted. By analyzing the current–voltage and quantum efficiency curves, the impact of doping concentration in the window layer was examined, covering a range from [Formula: see text] to [Formula: see text]. A rapid degradation of [Formula: see text] was observed for high doping concentrations. Additionally, the temperature dependence of external DC parameters for the temperatures 273, 300, and 318[Formula: see text]K was explored under AM1.5G and AM1.5D sunlight spectra. The application of two distinct light spectra resulted in the DC parameters exhibiting minimal variation or similarity. The study also took into account the influence of window thickness variation, temperature, and doping concentration. The findings demonstrate a remarkable influence of temperature and doping concentration on the DC parameters. [Formula: see text] value of 30.29[Formula: see text]mA/cm2 was achieved with a 3-nm thickness and an optimal efficiency of 19.48% was registered with a doping concentration of up to [Formula: see text], showcasing the promising potential of nc-3C-SiC:H.

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Electron transport characteristics in 4H-SIC polytype under high-electric-field

Cited by 2 publications

References 17 publications

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

New optimized HIT solar cell using wide-bandgap nc-3C-SiC:H as a window layer

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