Electron transport in bipolar transistors with biaxially strained base layers

Beisswanger, F.; Jorke, H.

doi:10.1109/16.477594

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Cited by 7 publications

(3 citation statements)

References 19 publications

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“…[1,[4][5][6][7]. For example, strain is widely used to improve the performance of the silicon materials [8,9].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electronic band structure modulated by local surface strain in the (111) facet of the 〈112〉 silicon nanowires

Zhang

Xin

Guo

et al. 2015

Solid State Communications

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“…[1,[4][5][6][7]. For example, strain is widely used to improve the performance of the silicon materials [8,9].…”

Section: Introductionmentioning

confidence: 99%

“…Strain has been proved to be a useful method for property modulation of various materials, which is an effective and economic way to modify the electron mobility, [1][2][3] band gap width, etc. [1,[4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Electronic band structure modulated by local surface strain in the (111) facet of the 〈112〉 silicon nanowires

Zhang

Xin

Guo

et al. 2015

Solid State Communications

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“…Only one paper [11] is known to the author, which proceeds from biaxial character of the strain acting to a p-n junction. But in the paper [11], a case of silicon oriented only in [001] direction has been considered and electron transport was assumed in the same direction.…”

Section: Introductionmentioning

confidence: 99%

Properties of junction diodes under conditions of bisotropic strains

Borblik¹

2009

Semicond. phys. quantum electron. optoelectron.

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In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)-and (111)-oriented silicon wafers on whose surface the diodes are located as well as longitudinal (in plane of the wafer) and transversal (perpendicular to it) diode current flow have been considered. It is shown that at small strains, the diodes located on the surface of (111)-Si are less subjected (as a whole) to their influence. Furthermore, the change in the intrinsic carrier concentration has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown to increase by several orders of magnitude irrespective of the strain sign.

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Piezojunction Effect: Stress Influence on Bipolar Transistors

Creemer

French²

2010

Ultra-Thin Chip Technology and Applications

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Electron transport in bipolar transistors with biaxially strained base layers

Cited by 7 publications

References 19 publications

Electronic band structure modulated by local surface strain in the (111) facet of the 〈112〉 silicon nanowires

Electronic band structure modulated by local surface strain in the (111) facet of the 〈112〉 silicon nanowires

Properties of junction diodes under conditions of bisotropic strains

Piezojunction Effect: Stress Influence on Bipolar Transistors

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