Electron Transport in Fluorinated Copper-Phthalocyanine

Schön, J. H.; Kloc, Ch.; Bao, Zhenan; Batlogg, B.

doi:10.1002/1521-4095(200010)12:20<1539::aid-adma1539>3.0.co;2-s

Cited by 29 publications

(13 citation statements)

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“…A value of approximately 10 12 cm Ϫ2 for n t is obtained from the experimental data ͑Fig. 11,19 Typical tunneling energies are in the range of several millielectron volts, which is in accordance with rough estimations. At low gate voltages E b is decreasing again.…”

Section: ͑2͒supporting

confidence: 83%

Charge transport through a single tetracene grain boundary

Schön¹,

Kloc²

2001

Applied Physics Letters

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Articles you may be interested inOn an example of the space charge limited conduction breakdown in relation to the current-voltage characteristics of a single layer metal/organic structure J. Appl. Phys.Grain-boundary-limited charge transport in solution-processed 6,13 bis(tri-isopropylsilylethynyl) pentacene thin film transistors Space charge limited transport and time of flight measurements in tetracene single crystals: A comparative study

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Section: ͑2͒supporting

confidence: 83%

Charge transport through a single tetracene grain boundary

Schön¹,

Kloc²

2001

Applied Physics Letters

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“…Compound 1 as a thin film shows mobility a factor of two lower [3] than the thin film of 3 and, thus, also makes a high quality film that captures a significant fraction of the available single-crystal mobility presumed from the analogous thin-film structure. However, the single-crystal structures cannot be considered optimal, since perfluorinated copper phthalocyanine, the only n-channel compound not highly sensitive to defects or otherwise unstable, [12] has a single-crystal mobility twice as high [13] as those observed for 3 and 4, and that of pentacene [10] and C 60 [14] is another three fold higher. It would be especially appealing to combine the solution and low temperature vapor processing of the NTCDI derivatives with higher electron mobility to produce idealized n-channel organic semiconductors.…”

mentioning

confidence: 99%

Solid-State Structural and Electrical Characterization ofN-Benzyl andN-Alkyl Naphthalene 1,4,5,8-Tetracarboxylic Diimides

Katz¹,

Siegrist²,

Schön³

et al. 2001

ChemPhysChem

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Fluoro groups on substituents attached to nitrogen determine both the solid‐state morphology and the distribution of electron traps in naphthalenetetracarboxylic diimide (NTCDI) compounds. Single‐crystal X‐ray structures (see picture) of three NTCDI compounds and current–voltage data on two are presented herein. Both herringbone and stacking motifs are observed (see picture) and electron mobilities of 0.5 cm2 V−1 s−1 occur at room temperature.

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“…It has been reported that exposure of organic films including F 16 CuPc to various gaseous atmospheres affects the charge transport and the gap density of states [32]. Bussolotti et al have suggested that intermolecular disorder due to nitrogen and oxygen exposure increases drastically the gap DOS of pentacene [33].…”

mentioning

confidence: 99%

“…The differences between these two gap DOSs (values and energy) may be caused by different spatial distribution of HOMO and LUMO as already mention in Refs. [32,33]. In addition, a low density of gap states can reduce the band bending in the organic semiconductor at the gate-dielectric interface and thus increase the gate-bias-induced CPD shift.…”

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confidence: 99%

Low density of gap states and unpinned Fermi level inn-channel organic thin-film transistors

Yogev

Rosenwaks

2014

Phys. Rev. B

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Electronic states within the band gap of a semiconductor have a significant influence on the electronic properties and the operational stability of electronic devices, especially in the case of organic semiconductors. Previous work has shown that the gap-state density in organic thin-film transistors (TFTs) is often so large that the Fermi level is pinned deep within the gap. For p-channel organic TFTs, we have recently reported that the density of gap states and hence the pinning of the Fermi level can be greatly reduced by optimizing the fabrication process. For n-channel organic TFTs, very little is known about the gap density of states and its impact on the performance and stability of the devices. Here, we report measurements of the density and distribution of gap states in n-channel TFTs based on two different organic semiconductors. We have found that the gap-state density in both semiconductors is relatively small (ß10 17 cm −3 ) and no greater than in p-channel organic TFTs fabricated with the same technology and the same gate dielectric. This is a significant finding, since both the performance and the stability of n-channel organic TFTs are often greatly inferior to those of p-channel organic TFTs. We have also found that the gap-state density increases over time during air exposure and that this increase in gap-state density correlates with the time-dependent, air-induced decrease in electron mobility.

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Electron Transport in Fluorinated Copper-Phthalocyanine

Cited by 29 publications

References 0 publications

Charge transport through a single tetracene grain boundary

Charge transport through a single tetracene grain boundary

Solid-State Structural and Electrical Characterization ofN-Benzyl andN-Alkyl Naphthalene 1,4,5,8-Tetracarboxylic Diimides

Low density of gap states and unpinned Fermi level inn-channel organic thin-film transistors

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