Electron Transport in Non‐Periodic Metallic Systems: Amorphous Alloys and Quasicrystals

Mizutani, Uichiro

doi:10.1002/pssb.2221760102

Cited by 30 publications

(26 citation statements)

References 51 publications

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“…Mizutani, 42 Cu-Zr MGs are high-resistivity alloys with negative TCR. Thermoelectric power is negative for all composition and fairly small in magnitude.…”

Section: Methodsmentioning

confidence: 99%

Local atomic order, electronic structure and electron transport properties of Cu-Zr metallic glasses

Antonowicz

Pietnoczka

Pȩkała

et al. 2014

Journal of Applied Physics

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The basic polyhedral clusters, the optimum glass formers, and the composition-structure-property (glass-forming ability) correlation in Cu-Zr metallic glasses J. Appl. Phys. 107, 063508 (2010) We studied atomic and electronic structures of binary Cu-Zr metallic glasses (MGs) using combined experimental and computational methods including X-ray absorption fine structure spectroscopy, electrical resistivity, thermoelectric power (TEP) measurements, molecular dynamics (MD) simulations, and ab-initio calculations. The results of MD simulations and extended X-ray absorption fine structure analysis indicate that atomic order of Cu-Zr MGs and can be described in terms of interpenetrating icosahedral-like clusters involving five-fold symmetry. MD configurations were used as an input for calculations of theoretical electronic density of states (DOS) functions which exhibits good agreement with the experimental X-ray absorption near-edge spectra. We found no indication of minimum of DOS at Fermi energy predicted by Mott's nearly free electron (NFE) model for glass-forming alloys. The theoretical DOS was subsequently used to test Mott's model describing the temperature variation of electrical resistivity and thermoelectric power of transition metal-based MGs. We demonstrate that the measured temperature variations of electrical resistivity and TEP remain in a contradiction with this model. On the other hand, the experimental temperature dependence of electrical resistivity can be explained by incipient localization of conduction electrons. It is shown that weak localization model works up to relatively high temperatures when localization is destroyed by phonons. Our results indicate that electron transport properties of Cu-Zr MGs are dominated by localization effects rather than by electronic structure.We suggest that NFE model fails to explain a relatively high glass-forming ability of binary Cu-Zr alloys. V C 2014 AIP Publishing LLC.[http://dx

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“…Mizutani, 42 Cu-Zr MGs are high-resistivity alloys with negative TCR. Thermoelectric power is negative for all composition and fairly small in magnitude.…”

Section: Methodsmentioning

confidence: 99%

Local atomic order, electronic structure and electron transport properties of Cu-Zr metallic glasses

Antonowicz

Pietnoczka

Pȩkała

et al. 2014

Journal of Applied Physics

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“…1 Under such circumstances, the d-electron conduction becomes essential in amorphous alloys consisting of the late transition metal ͑LT͒ and early transition metal ͑ET͒, in which the density of states at E F is dominated by the ET d states. An introduction of divalent Mg and trivalent Al into the LT-ET amorphous alloy allows us to change the d-electron-like density of states to the sp-electron-like ones and, hence, offers unique opportunities for studying the scattering mechanism in a disordered system throughout the dto sp-conduction regimes.…”

Section: Introductionmentioning

confidence: 99%

Experimental studies of atomic structure, electronic structure, and the electronic transport mechanism in amorphous Al-Cu-Y and Mg-Cu-Y ternary alloys

et al. 1996

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The local atomic structure in the amorphous Al x ͑Cu 0.4 Y 0.6 ͒ 100Ϫx and Mg x ͑Cu 0.4 Y 0.6 ͒ 100Ϫx ͑0рxр85͒ alloys was determined by neutron-diffraction experiments. The electronic structure near the Fermi level was determined using the same samples by means of x-ray photoemission spectroscopy and soft x-ray spectroscopy. Both sets of data are combined to determine self-consistently and uniquely the local atomic structure in both Al-and Mg-based amorphous alloys. The bonding nature and resulting atomic environment are found to depend significantly on whether the third element is Al or Mg. Based on the atomic and electronic structures thus derived, we could interpret the Al or Mg concentration dependence of the crystallization temperature, electronic specific-heat coefficient, and also that of the resistivity value of 300 K. The origin of the appearance of a positive Hall coefficient observed in the Al-based amorphous alloys but not in the Mg-based amorphous alloys is also briefly discussed.

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“…In such case, the electrical resistivity shows T 2 -dependence in low temperature range and T-linear dependence close to the room temperature. 10,11) As shown in the figure, TCR, increases negatively with increasing the absorbed hydrogen, y, indicating the absorbed hydrogen effects on the electrical resistivity. The inset of Fig.…”

Section: ¹2mentioning

confidence: 78%

Effect of Hydrogen Absorption on Electrical Transport Properties for Ni36Nb24Zr40 Amorphous Alloy Ribbons

et al. 2013

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Electrical resistivity measurements in the temperature range from 6 to 300 K were carried out in order to investigate the effects of the hydrogen absorption on the transport properties of Ni 36 Nb 24 Zr 40 amorphous alloy ribbon. The electrical resistivity basically behaved negative temperature dependence in all prepared specimens of (Ni 0.36 Nb 0.24 Zr 0.40 ) 100¹x H x with 0¯x < 15. The absolute value of temperature coefficient of the resistivity, TCR, increased with increasing the amount of the absorbed hydrogen. In addition, it was also clear that the electrical resistivity gradually increased with the time just after electrochemically charging, and tended to saturate after about 800 ks at 300 K. The behavior of the gradual increase in the electrical resistivity with the time was explained by the model including two kinds of the relaxation times, being associated with the migration of the hydrogen from the sample surface.

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Electron Transport in Non‐Periodic Metallic Systems: Amorphous Alloys and Quasicrystals

Cited by 30 publications

References 51 publications

Local atomic order, electronic structure and electron transport properties of Cu-Zr metallic glasses

Local atomic order, electronic structure and electron transport properties of Cu-Zr metallic glasses

Experimental studies of atomic structure, electronic structure, and the electronic transport mechanism in amorphous Al-Cu-Y and Mg-Cu-Y ternary alloys

Effect of Hydrogen Absorption on Electrical Transport Properties for Ni<sub>36</sub>Nb<sub>24</sub>Zr<sub>40</sub> Amorphous Alloy Ribbons

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