“…Although Al-based compounds would be non-toxic and earth-abundant TE materials, these TE properties have been scarcely investigated. Some Al-based materials have narrow bandgaps (e.g., RuAl 2 [10]) or pseudogaps (e.g., Al 82.6-x Re 17.4 Si x [11], Fe 2 VAl [12,13]), and the Fermi level is located at the steeply descending part of the density of states (DOS). In general, a sharp increase in the DOS enhances S according to Mott's theory, [14] and the residual DOS support the high s. This is why some Al-based materials have high values of S 2 s, also called the power factor (PF).…”