Electron transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the effects of disorder and electron traps

Mensfoort, van Slm Siebe; Billen, Jgje Joris; Vulto, Sie; Janssen, Raj René; Coehoorn, R.

doi:10.1103/physrevb.80.033202

Cited by 40 publications

(50 citation statements)

References 30 publications

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“…40), an electron-only (EO) diode (with an AlO x anode, see Ref. 41) and for a DC device, with a layer thickness L ¼ 98, 96; and 100 nm, respectively (symbols). At high current densities, the JðVÞ curve of the DC device was measured using a pulse method, in order to prevent from substantial heating.…”

Section: Device Structure and Experimental Resultsmentioning

confidence: 99%

“…40 In Ref. 41 the injection barrier at the cathode-polymer interface (u) was found to be 0:360:1 eV. In this paper, a value u ¼ 0:4 eV has been used.…”

Section: Device Modelingmentioning

confidence: 99%

“…Furthermore, in the 1D-ME model electron trapping is treated in the same manner as in the continuum EO model employed in Ref. 41 viz. by making use of the multiple-trap-and-release model.…”

Section: Device Modelingmentioning

confidence: 99%

“…40) and EO (Ref. 41) device modeling using the extended Gaussian disorder model (EGDM). The densities of states assumed within these models are indicated in Fig.…”

Section: Device Modelingmentioning

confidence: 99%

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Predictive modeling of the current density and radiative recombination in blue polymer-based light-emitting diodes

Mensfoort

Billen

Carvelli

et al. 2011

Journal of Applied Physics

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The results of a combined experimental and modeling study of charge transport, recombination and light emission in blue organic light-emitting diodes (OLEDs) based on a polyfluorene derivative are presented. It is shown that the measured temperature-dependent current-voltage curves and the voltage-dependent current efficiency are accurately described using an OLED device model that is based on the separately determined unipolar electron and hole mobility functions. The recombination rate is calculated using the Langevin formula, including recombination of holes with free as well as trapped electrons. The light emission is obtained from the exciton formation profile using independently determined values of the exciton radiative decay probability, the average dipole orientation, and assuming a fraction of singlet excitons ηS =(22±3)%, close to the quantum-statistical value. No additional free parameter is used. This shows that predictive one-dimensional device modeling of OLEDs is feasible.

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Section: Device Structure and Experimental Resultsmentioning

confidence: 99%

“…40 In Ref. 41 the injection barrier at the cathode-polymer interface (u) was found to be 0:360:1 eV. In this paper, a value u ¼ 0:4 eV has been used.…”

Section: Device Modelingmentioning

confidence: 99%

“…Furthermore, in the 1D-ME model electron trapping is treated in the same manner as in the continuum EO model employed in Ref. 41 viz. by making use of the multiple-trap-and-release model.…”

Section: Device Modelingmentioning

confidence: 99%

“…40) and EO (Ref. 41) device modeling using the extended Gaussian disorder model (EGDM). The densities of states assumed within these models are indicated in Fig.…”

Section: Device Modelingmentioning

confidence: 99%

See 2 more Smart Citations

Predictive modeling of the current density and radiative recombination in blue polymer-based light-emitting diodes

Mensfoort

Billen

Carvelli

et al. 2011

Journal of Applied Physics

Self Cite

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“…37 A similar model was used as well to interpret the current-voltage dependence in poly(phenylene vinylene) and in a polyfluorene-based copolymer. 38,39 The purpose of the present work is to provide a detailed comparison of the hopping model and ME model in describing the effect of charge-carrier concentration on electrical conductivity, carrier mobility, and position of the Fermi level in the case of such a composite DOS. We apply our approach to explain the recent experimental data reported for n-doped C 60 films.…”

Section: Introductionmentioning

confidence: 99%

Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

2013

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We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C 60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level.

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Effects of Gaussian Disorder on Charge‐Carrier Transport and Recombination in Organic Semiconductors

Coehoorn

Bobbert

2012

Physics of Organic Semiconductors

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Electron transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the effects of disorder and electron traps

Cited by 40 publications

References 30 publications

Predictive modeling of the current density and radiative recombination in blue polymer-based light-emitting diodes

Predictive modeling of the current density and radiative recombination in blue polymer-based light-emitting diodes

Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

Effects of Gaussian Disorder on Charge‐Carrier Transport and Recombination in Organic Semiconductors

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