“…It possesses great potential applications in many emerging areas such as next-generation ultrahigh performance electronics and transistor logic circuits, sensors, and transparent conductors. − Several schemes have been proposed to open a tunable bandgap in graphene, which is required for semiconductor materials. ,− Recently, a strategy of constructing periodic holes on graphene to form graphene antidot lattices (GALs) has been extensively studied. − Theoretical calculations have predicted that antidot lattices change the electronic properties of graphene from semimetallic to semiconducting, where the opened gap can be tuned by the size, shape, and symmetry of both the hole and the lattice cell. − ,− The induced gap in GALs is approximately proportional to the hole diameter and inversely proportional to the superlattice cell area, so one can achieve a substantial gap value of ∼0.2 eV in a unit cell of 10 nm . Accordingly, the transport properties of graphene nanoribbons (GNRs) are modulated by the existence of the antidots. − Antidot lattices on graphene also affect the occurrence of flat bands and collective magnetic behavior, and thus may lead to applications in storage media and spintronics. ,,− Alternative periodic perturbations by such means as selective adsorption and nanohubs have also been explored theoretically. − …”