Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films

Reinhardt, Anna; Frenzel, Heiko; Wenckstern, Holger von; Spemann, D.; Grundmann, Marius

doi:10.1002/pssa.201532939

Cited by 6 publications

(6 citation statements)

References 31 publications

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“…Hence, the conduction mechanism in this study can be explained by the percolation conduction model. 23,27,40 As shown above in Figure 1, Cu(S,I) thin films in the amorphous phase show enlarged bandgaps from 2.6 to 2.9 eV as the I-content increases. However, this bandgap broadening is achieved at the expense of a reduction of the conductivity from 5 × 10 3 to 1 × 10 3 S cm −1 .…”

mentioning

confidence: 60%

“…7,10,28 The hole conductivity of typical highly disordered samples obeys the relation ln σ ∝ T −1/4 (see Figure S7), which can match either the Mott variable range hopping (VRH) model or the percolation conduction model. 23,27,40 As the data in Figure S5 are obtained for temperatures above 130 K, VRH is assumed not to be the dominant transport mechanism in this temperature regime. Hence, the conduction mechanism in this study can be explained by the percolation conduction model.…”

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confidence: 99%

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Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity

Splith

Wang

et al. 2023

J. Phys. Chem. Lett.

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Amorphous transparent conductors (a-TCs) are key materials for flexible and transparent electronics but still suffer from poor p-type conductivity. By developing an amorphous Cu(S,I) material system, record high hole conductivities of 103–104 S cm–1 have been achieved in p-type a-TCs. These high conductivities are comparable with commercial n-type TCs made of indium tin oxide and are 100 times greater than any previously reported p-type a-TCs. Responsible for the high hole conduction is the overlap of large p-orbitals of I– and S2– anions, which provide a hole transport pathway insensitive to structural disorder. In addition, the bandgap of amorphous Cu(S,I) can be modulated from 2.6 to 2.9 eV by increasing the iodine content. These unique properties demonstrate that the Cu(S,I) system holds great potential as a promising p-type amorphous transparent electrode material for optoelectronics.

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confidence: 60%

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confidence: 99%

Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity

Splith

Wang

et al. 2023

J. Phys. Chem. Lett.

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“…The detailed study of the relation between composition and band gap can be seen in section 3.1.2. Previous research has focused on altering nitrogen-to-oxygen ratios [11] at high sputtering power [33] and working pressures [34] to produce varying compositional stoichiometries. In the present study, we suggest a novel method for accomplishing this with low working pressure, low power, and utilisation of residual oxygen without introducing further oxygen to the process.…”

Section: Band Gap Tuningmentioning

confidence: 99%

“…In earlier studies, the ZnON thin films were developed by alternating a 100 to 200 SCCM flow rate of nitrogen with 1 to 10 SCCM of oxygen [13,34] to balance the disparity in reactivity between the two gases. However, our approach aims to achieve the same result by varying the working pressure inside the chamber.…”

Section: Band Gap Tuningmentioning

confidence: 99%

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

J G,

Jose,

Nair

et al. 2024

Mater. Res. Express

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Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying elemental concentrations, by precisely controlling the working pressure. The working pressure was varied from 0.004 mbar to 0.026 mbar.For working pressure greater than 1.6 x 10$^{-3}$mbar, the mean free path of ions decrease, the sputtering rate decreases and the concentration of nitrogen in the films decreases. The band gap of the film obtained from UV Vis Spectroscopy initially decreases and reaches a minimum of 1.6 eV at a flow rate of 20 sccm of nitrogen, after which it drastically increases. The correlation between the micro structure and band gap was investigated. The initial alloy structure of the film was found to exist when the band gap was between 1.66 eV and 2.15 eV, beyond which, a distorted wurtzite structure began to emerge. At a band gap of 2.7 eV, the spectrum peaks indicated the coexistence of both alloy and wurtzite structures. With an increasing band gap, the wurtzite structure became dominant, completely replacing the alloy structure at 3.25 eV. This study revealed the existence of intermediate structures formed during the tuning of the band gap, which can have important implications for future research aimed at developing heterostructures and 2D superlattices for photonics applications.

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“…attracting significant attention as potential alternatives to amorphous indium-gallium-zinc oxide (IGZO) TFTs in next-generation largesized high-resolution displays owing to their high field-effect mobility (μ FE = ∼ 40-120 cm 2 /V•s) and excellent photostability. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] ZnON is an alloy of an oxide (ZnO) and a nitride (Zn 3 N 2 ) having the same Zn cation. Because of the lower electron effective mass in ZnON (0.19 m e , where m e is the rest mass of an electron) than in IGZO (0.34 m e ), 3 ZnON TFTs have a higher μ FE compared to conventional IGZO TFTs (μ FE = ∼10-20 cm 2 /V•s).…”

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confidence: 99%

Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors

Kim¹,

Park²,

Kwon³

2017

ECS J. Solid State Sci. Technol.

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We investigated the effect of channel layer thickness (t ch ) on the electrical and thermal stabilities of high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). ZnON TFTs with various t ch values of 11, 16, 21, and 26 nm were prepared for experiments. The drain current was barely modulated by the gate-to-source voltage in the ZnON TFT with a t ch of 26 nm. When t ch was less than 21 nm, both the electrical and thermal stabilities of the ZnON TFTs improved with an increase in t ch . To explain this phenomenon, the chemical composition and bonding states of the ZnON thin-films with different thicknesses were characterized using X-ray photoelectron spectroscopy (XPS). The XPS results indicated that more oxygen exists in the bulk of the 11-nm-thick ZnON thin-film than in the bulk of the 21-nm-thick ZnON thin-film. In addition, the number of defective Zn X N Y bonds decreased in the ZnON with an increase in the distance from the back surface to the characterized layer. Because the excess oxygen and defective Zn X N Y bond generate subgap states in ZnON, the observed t ch -dependence of the electrical/thermal stability in the ZnON TFT could be mainly attributed to the decrease in the subgap states in ZnON with the increase in t ch .

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Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films

Cited by 6 publications

References 31 publications

Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity

Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors

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