Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields

Abstract

We report on the electron transport properties based on ballistic electrons under magnetic fields in four‐terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four‐terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)