Electron transport properties of gallium nitride for microscopic power device modelling

Benbakhti, B.; Rousseau, Michel; Soltani, A.; Jaeger, J-C. De

doi:10.1088/1742-6596/193/1/012005

Cited by 3 publications

(3 citation statements)

References 16 publications

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“…Some authors have also associated the early saturation of the electron velocity in AlGaN/GaN structures with hot phonon scattering [13,14]. It is obvious that the need for a valid GaN electron transport model under high electric field is significant and literature offers both experimental and simulation data [15,16,17,18,19,20,21,22,23,24,25,26,27]. proposed a complete analytical model for the electron mobility in wurtzite GaN.…”

Section: Electron Drift Velocitymentioning

confidence: 99%

2-D Simulation of Hot Electron-Phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach

Fan

Tarau

Bonner

et al. 2012

Volume 2: Heat Transfer Enhancement for Practical Applications; Fire and Combustion; Multi-Phase Systems; Heat Transfer in Elec

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In this study, a thermal and electrical coupled device solver is developed to simulate the energy transfer mechanism within a GaN FET with a gate length of 0.2 μm. The simulation simultaneously solves a set of hydrodynamic equations (derived from the Boltzmann Transport Equation) and the Poisson equation for electron, optical phonon and acoustic phonon energies, electron number density, electric field and electric potential. This approach has been previously established for gallium arsenide (GaAs) devices [36,37], but has not been extended to GaN due to the lack of readily available property values for GaN devices that are required. Via extensive literature study, high-fidelity properties for GaN were collected in analytical forms with respect to many dependencies, e.g. lattice temperature, electrical field, electron number density, doping rate, defects rate. These properties are then implemented into the developed code to provide a high accuracy sub-micron GaN device simulation. Simulations show that non-equilibrium heat generation is exhibited in a typical device while the drain current is reduced due to the decrease in electron mobility. Future analysis is needed to quantify the hot-electron effect on reducing the drain current and to discover more effective ways of heat removal.

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Section: Electron Drift Velocitymentioning

confidence: 99%

2-D Simulation of Hot Electron-Phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach

Fan

Tarau

Bonner

et al. 2012

Volume 2: Heat Transfer Enhancement for Practical Applications; Fire and Combustion; Multi-Phase Systems; Heat Transfer in Elec

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“…In addition, this bandgap combined with its strong chemical bonds, high electronic saturation velocity and high breakdown voltage, compared to silicon, open new prospects in microelectronics applications. Indeed, higher temperature, higher power and higher frequency should be reachable to GaN based devices (2).…”

Section: Introductionmentioning

confidence: 99%

Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices

et al. 2014

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In this paper, the etched surface states of GaN using two different etching techniques are reported. In Cl2/Ar ICP based plasma, two types of defect were identified: cavities and columns. A strong decrease of the cavity diameter and density on etched surface was observed with the addition of CHF3 in the chemistry. SF6 addition instead of CHF3 leads to an etched surface free of defects with low GaN etch rate similar to that obtained with IBE technique. XPS and AFM measurements revealed the importance of fluorine species which leads to the formation of a GaxFy passivation layer on the GaN etched surface.

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“…It is obvious that a simple analytical model can effectively resolve many of the problems not only for GaAs but also for other semiconductors. For the analytical modeling of the electrical properties of the semiconductor devices, several approaches can be employed such as particle swarm optimization (PSO) (Djeffal et al , 2009) or genetic algorithms (GAs) (Sarkar et al , 2003; Sarkar, 2004; Benbakhti et al , 2009). In this work we attempt to study the capability of GAs to provide a non‐complicated model for the estimation of the electron mobility in GaAs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of electron mobility in GaAs‐based devices using genetic algorithm

Taheri

Davoodi

Setayeshi

2012

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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PurposeThe purpose of this work is to study the capability of heuristic algorithms like genetic algorithm to estimate the electron transport parameters of the Gallium Arsenide (GaAs). Also, the paper provides a simple but complete electron mobility model for the GaAs based on the genetic algorithm that can be suitable for use in simulation, optimization and design of GaAs‐based electronic and optoelectronic devices.Design/methodology/approachThe genetic algorithm as a powerful heuristic optimization technique is used to approximate the electron transport parameters during the model development.FindingsThe capability of the model to approximate the electron transport properties of Gallium Arsenide is tested using experimental and Monte Carlo data. Results show that the genetic algorithm based model can provide a reliable estimate of the electron mobility in Gallium Arsenide for a wide range of temperatures, concentrations and electric fields. Based on the obtained results, this paper shows that the genetic algorithm can be a useful tool for the estimation of the transport parameters of semiconductors.Originality/valueFor the first time, the genetic algorithm is used to calculate the electron transport parameters in Gallium Arsenide. A complete electron mobility model for a wide range of temperatures, doping concentrations, compensation ratios and electric fields is developed.

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Electron transport properties of gallium nitride for microscopic power device modelling

Cited by 3 publications

References 16 publications

2-D Simulation of Hot Electron-Phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach

2-D Simulation of Hot Electron-Phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach

Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices

Investigation of electron mobility in GaAs‐based devices using genetic algorithm

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