Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress

Abstract

The relation between generation of neutral electron trap centers and hole trapping in thermally grown SiO2 under Fowler–Nordheim tunneling stress has been investigated. The experimental results show that the density of neutral electron trap centers is proportional to the density of trapped holes under Fowler–Nordheim tunneling stress with various electric fields and the total number of electrons injected into the oxide. The generation mechanism is explained by a model based on strained bonds.

Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors

“…32,33 Second, based on Fig. 12, we can speculate the existence of an amphoteric defect which is filled with an electron near threshold, is empty and thus neutral near flatband, and can be filled with a hole ͑devoid of an electron͒ during stress when high-energy holes are available.…”

“…First, previous studies of hot-hole damage in SiO 2 point to the generation of electron neutral traps. 32,33 Although we are cautious about the physical interpretation of the fitting parameter 0 used here as a capture cross section, FIG. 13.…”

Oxygen vacancy with large lattice distortion as an origin of leakage currents in SiO/sub 2/

“…It has been observed that the generation of electron traps is enhanced by hole injection [4], and is proportional to the number of trapped holes [ 2 ] . Although some theoretical investigations have been carried out on the microscopic origin of hole traps and electron traps, the mechanism of generation of these traps, and the relationship between the hole traps and electron trap generation have not been fully clarified so far.…”

Накопление Зарядов В Моп-Структурах С Поликремниевым Затвором При Туннельной Инжекции

“…В ряде работ [8][9][10][11] при достаточно высоких зарядах туннельной инжекции электронов (Q in j > 0.1 Кл/см 2 ) и напряженности электрического поля (E > 8 МВ/см) после введения положительного заряда наблюдалось образование отрицательного заряда, который авторы объясняли генерацией новых электронных ловушек. Было предложено несколько механизмов их генерации [8][9][10][11][12][13][14][15][16]. В работах [10,12] генерация электронных ловушек у катода связывалась с освобождением водорода вблизи анода под действием горячих электронов, его миграцией к катоду и взаимодействием водорода с оборванными связями оксидных ловушек вблизи катода.…”