Electron trapping by excited microvoids (ETEM)—an explanation of the Staebler–Wronski effect

Krüger, Thomas; Sax, Alexander F.

doi:10.1016/j.physb.2004.10.007

Cited by 8 publications

(13 citation statements)

References 80 publications

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“…The idea of strained Si with direct band gap is consistent with the model 15,16 relating the origin of the Staebler-Wronski effect in a-Si:H to an enormous number of voids in the sense that carrier recombination in direct band gap material is known to be much faster than those with indirect band gap. Furthermore, it explains why light-emitting feature of a-Si:H in the infrared range of spectra is more advanced than that of bulk crystalline Si.…”

Section: Discussionsupporting

confidence: 63%

Strain-induced modulation of band structure of silicon

Karazhanov

Davletova²,

Ulyashin

2008

Journal of Applied Physics

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This work presents ab initio study of strain-induced modulation of band structure of Si.It is shown that at straining pressures >12 GPa band structure of Si can be turned from indirect to direct. Both the bottommost conduction band and topmost valence band are located at the Γ point. The conduction band minimum at the Γ point of the strained Si is found to be much more dispersive than that at the X point of the unstressed Si.Consequently, electrical conductivity through the Γ valley is suggested to be more superior than the X point of the unstressed Si. Barrier height, which is needed to transfer electrons in the Γ point to X/L points or from X/L to Γ point have been calculated. The results have been applied to explain peculiarities of electronic structure and light emission of Si based materials containing dislocations and voids.

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Section: Discussionsupporting

confidence: 63%

Strain-induced modulation of band structure of silicon

Karazhanov

Davletova²,

Ulyashin

2008

Journal of Applied Physics

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“…In this communication, we show that the model presented by Kru¨ger and Sax [6] cannot explain the observed SWE. First, we show that the rate equations and the numbers for the rate constants given in Table 1 of Kru¨ger and Sax [6] are inconsistent.…”

Section: Introductionmentioning

confidence: 64%

“…As elucidated in Ref. [6], these models do not quite satisfactorily account for all properties of the additional ''dangling bond'' paramagnetic centers that are observed after photodegradation. However, the conventional models of the SWE effect can easily be constructed to satisfactorily describe the slow rise and the thermal annealing of the activated structural defects.…”

Section: Introductionmentioning

confidence: 94%

“…Recently, Kru¨ger and Sax [6] have proposed an alternative SWE process that starts from a microscopic defect model. In their theory, excited microvoid centers are considered to act as traps for the photoexcited electrons.…”

Section: Introductionmentioning

confidence: 99%

“…When capturing a photoelectron, the excited neutral A Ã defect is transformed into some negatively charged defect state B Ã ; which by internal conversion transforms into the metastable negative state B. This capturing of photoelectrons into metastable B states is considered to be the reason for the SWE, according to Kru¨ger and Sax [6].…”

Section: Introductionmentioning

confidence: 99%

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Electron trapping by excited microvoids does not give rise to a Staebler–Wronski effect

Overhof

2005

Physica B: Condensed Matter

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Preconditioning of thin-film PV module technologies for calibration

Kenny

Chatzipanagi

Sample

2012

Prog. Photovolt: Res. Appl.

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Thin-film module technologies are known for their metastability, and a study of this behaviour for different types of thin-film modules is presented. The modules investigated through a series of controlled light-soaking procedures are copper-indium sulfide (CIS), copper-indium-gallium diselenide (CIGS), cadmium telluride (CdTe), triple-junction amorphous silicon (a-Si), micromorph silicon (a-Si/m-Si) and thin-film crystalline silicon (CSG). The objective of the paper is to investigate whether after the stabilization point, as defined in the international qualification standard IEC 61646, there is any further significant change in the maximum power of the module. It was found that all CIS and CIGS modules investigated in this study stabilize according to IEC 61646, and no further significant change in maximum power is observed. The same result was obtained also for the CSG module. To the contrary, CdTe, triple-junction a-Si and a-Si/m-Si modules continued to show further change in maximum power even after they stabilize according to IEC 61646. For the purposes of module qualification, given the need to stay 'within reasonable constraints of cost and time', the stability procedure of IEC 61646 could be considered as satisfactory. However, in order to perform sufficient preconditioning of thin-film modules prior to precision calibration, a new more complete standard procedure is needed, tailored to the specific technology. For example, tighter stability limits lower than the current 2%, which would have the effect of increasing the number of light-soaking periods required.

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Electron trapping by excited microvoids (ETEM)—an explanation of the Staebler–Wronski effect

Cited by 8 publications

References 80 publications

Strain-induced modulation of band structure of silicon

Strain-induced modulation of band structure of silicon

Electron trapping by excited microvoids does not give rise to a Staebler–Wronski effect

Preconditioning of thin-film PV module technologies for calibration

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