Electron tunneling experiments on spin glass Ni1−xMnx films

Hatta, E.; Tonokawa, M.; Nagao, Jiro; Mukasa, K.

doi:10.1016/s0038-1098(97)80026-9

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…The depression of the DOS around the Fermi energy, or, in other words, the development of this pseudogap feature, has been observed in many different disordered alloys by using different experimental probes. In particular, electron tunnelling spectroscopy was used to study this effect, and it shows, as experimental corroboration of the existence of a pseudogap feature in the DOS, a ZBA which becomes sharper as temperature decreases [38,52,[54][55][56][57].…”

Section: Alpdre Junctionsmentioning

confidence: 99%

Tunnelling and point contact spectroscopy of the density of states in quasicrystalline alloys

Escudero

Lasjaunias

Calvayrac

et al. 1999

J. Phys.: Condens. Matter

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Point contact and tunnelling experiments performed at low temperatures were used to study the electronic behaviour of the icosahedral quasicrystalline alloys AlPdRe, AlCuFe, and AlPdMn. With samples of high quality we observed at low temperatures a zero-bias anomaly that we related to the decrease of the electronic density of states (DOS) due to the electron-electron interaction. This interaction tends to diminish the DOS at the Fermi level and can be seen as the energy pseudogap of the alloy. Our experiments indicate that the DOS is strongly modified near and consists of a spiky feature in a broad pseudogap, with the width of the feature of the order of 100 meV or even larger for the AlPdRe, whereas it is as small as 20-22 meV for Al-Cu-Fe and 17-20 meV for Al-Pd-Mn. The broad pseudogap has widths larger than 400 meV for AlPdRe, whereas for AlCuFe it is about 80-90 meV and for AlPdMn it is of the order of 110-122 meV. The studies were performed on three samples of the compositions , , and . The junctions were of the types alloy-Au(In, Al) and alloy-insulator-Au(In, Al), and were studied at different temperatures between that of liquid nitrogen and 2 K, and even to 400 mK for the AlCuFe alloy.

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Section: Alpdre Junctionsmentioning

confidence: 99%

Tunnelling and point contact spectroscopy of the density of states in quasicrystalline alloys

Escudero

Lasjaunias

Calvayrac

et al. 1999

J. Phys.: Condens. Matter

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“…1, curve b [12], it is clear that the degree of disorder for the Fe substituted sample is larger than that for the Ni substituted sample. On the other hand, for a highly degenerate carrier system, it was found that a magnetic disorder state yields a strong electron tunneling conductance minimum [15]. On the other hand, for a highly degenerate carrier system, it was found that a magnetic disorder state yields a strong electron tunneling conductance minimum [15].…”

Section: Resultsmentioning

confidence: 99%

The Effect of Magnetic Atom Substitution on the Tunneling Conductance in Skutterudite CoSb3 Semiconductors

Nagao

Ebinuma

Uchida

et al. 2001

phys. stat. sol. (b)

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Electron tunneling experiments were performed on n‐Co0.9Ni0.1Sb3–Al oxide–Al junctions measured at 4.2 K. A V‐shape tunneling conductance curve with small zero bias offset is observed, which can be associated with disorder states. Comparing with the results on p‐Co0.9Fe0.1Sb3 samples, it has been clarified that the Fe substitution leads to a stronger three‐dimensional disorder state as compared to the case of Ni substitution. Magnetic susceptibility measurements suggest that the observed three‐dimensional disorder state is mainly magnetic in nature.

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Electron tunneling experiments on skutterudite Co1−xFexSb3 semiconductors

Nagao

Ferhat

Anno

et al. 2000

Applied Physics Letters

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Electron tunneling experiments were performed on p-Co1−xFexSb3–Al-oxide–Al junctions for x=0 and x=0.1 at 4.2 K. A U-shaped tunneling conductance curve obtained for polycrystalline p-CoSb3 clearly shows an energy-band gap of ∼50 meV. For p-Co0.9Fe0.1Sb3 skutterudites, a strong zero-bias conductance anomaly is observed. This anomaly may be due to a structural disorder arising from defects such as vacancies and interstitial Fe atoms.

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Electron tunneling experiments on spin glass Ni1−xMnx films

Cited by 5 publications

References 14 publications

Tunnelling and point contact spectroscopy of the density of states in quasicrystalline alloys

Tunnelling and point contact spectroscopy of the density of states in quasicrystalline alloys

The Effect of Magnetic Atom Substitution on the Tunneling Conductance in Skutterudite CoSb3 Semiconductors

Electron tunneling experiments on skutterudite Co1−xFexSb3 semiconductors

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