Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

Jacobs, Benjamin W.; Ayres, Virginia M.; Petkov, Mihail P.; Halpern, Joshua B.; He, Maoqi; Baczewski, Andrew David; McElroy, Kaylee; Crimp, M. A.; Zhang, Jiaming; Shaw, Harry

doi:10.1021/nl062871y

Cited by 37 publications

(38 citation statements)

References 45 publications

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“…[28,31] This implies that the tetrapod heterostructures display electron confinement or strain effects. [33] However, the Bohr diameter of bulk ZnS materials is ca. 5 nm, [34] such small blue-shift may be attributed to strain effect from the cone-shape WZ nanowires of the branch.…”

Section: Propertiesmentioning

confidence: 99%

Growth, Cathodoluminescence and Field Emission of ZnS Tetrapod Tree‐like Heterostructures

Chen¹,

Zou²,

Liu³

et al. 2008

Adv Funct Materials

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We report the growth mechanism, cathodoluminescence and field emission of dual phase ZnS tetrapod tree‐like heterostructures. This novel heterostructures consist of two phases: zinc blende for the trunk and hexagonal wurtzite for the branch. Direct evidence is presented for the polarity induced growth of tetrapod ZnS trees through high‐resolution electron microscopy study, demonstrating that Zn‐terminated ZnS (111)/(0001) polar surface is chemically active and S‐terminated (${\bar 1}$${\bar 1}$${\bar 1}$)/(000$\bar 1$) polar surface is inert in the growth of tetrapod ZnS trees. Two strong UV emissions centered at 3.68 and 3.83 eV have been observed at room temperature, which are attributed to the bandgap emissions from the zinc blende trunk and hexagonal wurtzite branch, indicating that such structures can be used as unique electromechanical and optoelectronic components in potential light sources, laser and light emitting display devices. In addition, the low turn‐on field (2.66 Vµm−1), high field‐enhancement factor (over 2600), large current density (over 30 mAcm−2 at a macroscopic field of 4.33 Vµm−1) and small fluctuation (∼1%) further indicate the availability of ZnS tetrapod tree‐like heterostructures for field emission panel display. This excellent field‐emission property is attributed to the specific crystallographic feature with high crystallinity and cone‐shape patterned branch with nanometer‐sized tips. Such a structure may optimize the FE properties and make a promising field emitter.

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Section: Propertiesmentioning

confidence: 99%

Growth, Cathodoluminescence and Field Emission of ZnS Tetrapod Tree‐like Heterostructures

Chen¹,

Zou²,

Liu³

et al. 2008

Adv Funct Materials

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“…[18][19][20][21][22] Although most GaN nanowires crystallize in the stable WZ structures, an embedded ZB phase in the WZ nanowires have been observed. [23][24][25] Recently, the WZ/ZB heterojunctions have been synthesized. [26,27] One case is the WZ/ZB heterojunctions form along the nanowire growth direction, as shown in Figure 1 a, the other case is the heterojunctions form perpendicular to the nanowire growth direction, as shown in Figure The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods.…”

Section: Introductionmentioning

confidence: 99%

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

Wang

Gao

et al. 2010

ChemPhysChem

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The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.

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“…[32,33] This implies that the ZnS architecture displays electron confinement or strain effect. [34] However, the Bohr diameter of bulk ZnS materials is ca. 5 nm, [14] such a small blue-shift may be attributed to the strain effect from the cone-shaped WZ nanowire of the branch, which is consistent with our observation in the ZnS dual-phase tetrapod treelike heterostructures.…”

mentioning

confidence: 99%

ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

et al. 2010

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Branched assemblies of nanostructures (nanocrystals, nanowires, nanobelts and nanotubes) as building blocks for functional materials and devices are the key to tailoring properties for specific applications in micro-/nanoelectromechanical systems, optoelectronics, field emitters, and light-emitting diodes. [1][2][3][4][5] Direct fabrication of complex nanostructures with controlled structural characteristics (including morphology, dimensionality, surface architectures, and crystal structures) represents a significant challenge in the field of nanometer-scale science and technology. Intensive efforts have been devoted to achieving desired morphology or shape (such as cones, spheres, tubes, wires, belts, cables, and branched heterostructures) and crystallinity of various inorganic crystals-from micrometer to nanometer size. Such structural parameters represent key elements that determine their electrical, optical, and field-emission (FE) properties. High-quality field emitters are very desirable for applications in a wide range of FE-based devices such as flat-panel displays, parallel-electron-beam microscopes, vacuum microwave amplifiers, and X-ray sources. To date, various FE cold cathode 1D nanostructural materials, such as carbon nanotubes, ZnO, ZnS, Si, SiC, CdS, and AlN nanostructures, have been demonstrated as candidates for achieving a high FE-current density at low electric fields because of their high aspect ratios.[6] Especially, branched nanostructures with a high packing density and highly crystalline nanotips can significantly enhance their FE properties and thus show great promising for practical applications. Recently, special architectures, such as AlN nanoarchitectures, [2] comblike ZnO nanostructures, [7] ZnO nanoarchitectures, [8] cactus-like Ga 2 O 3 Nanostructures, [9] CdTe architectures, [10] and branched ZnS-In heterostructures, [11] have been observed and have shown improved FE properties.ZnS, a wide bandgap semiconductor with a gap energy of 3.7 eV at 300 K, is one of the first discovered compound semiconductors and probably one of the most important materials in electronic/optoelectronic industries with prominent applications in flat-panel displays, sensors, lasers, and photocatalysis. [12,13] Interest in FE from ZnS has been increasing because of its charming performance. Many studies have been reported on manipulating the size, morphology, and crystal structure of ZnS materials for optimizing their FE properties, and various ZnS nanostructures, such as rods, [14] wires, [15] belts, [16][17][18] cables, [19,20] tubes, [21] tetrapods, [22] helices, [23] and conelike structures, [24][25][26] are synthesized. However, understanding of self-assembled single-phased ZnS branched architectures and their associated FE properties is limited, [11] although such information is vital for their potential applications.In this Communication, we report a novel single-phased ZnS branched architecture, self-assembled through a facile thermal evaporation process. This novel architecture consists of a singl...

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Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

Cited by 37 publications

References 45 publications

Growth, Cathodoluminescence and Field Emission of ZnS Tetrapod Tree‐like Heterostructures

Growth, Cathodoluminescence and Field Emission of ZnS Tetrapod Tree‐like Heterostructures

Charge Separation in Wurtzite/Zinc‐Blende Heterojunction GaN Nanowires

ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

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