2011
DOI: 10.1016/j.jssc.2011.04.036
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Electronic and structural properties of A Al2Se4 (A=Ag, Cu, Cd, Zn) chalcopyrite semiconductors

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Cited by 15 publications
(12 citation statements)
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“…It has been established that structural distortion has prominent effects on band gap and electronic properties of pure chalcopyrite [22] and defect/substituted chalcopyrite semiconductors [23,24]. In the present work we calculate quantitative change in band gap, electronic and optical properties due to structural distortion.…”
Section: Introductionmentioning
confidence: 91%
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“…It has been established that structural distortion has prominent effects on band gap and electronic properties of pure chalcopyrite [22] and defect/substituted chalcopyrite semiconductors [23,24]. In the present work we calculate quantitative change in band gap, electronic and optical properties due to structural distortion.…”
Section: Introductionmentioning
confidence: 91%
“…For all these calculation, the tetrahedron method is used within TB-LMTO formalism. In this method, the dielectric function is expressed as an integral over the constant-energy surface is referred as ideal structure (ideal case) [20,21,22,23,24]. Anion shifts along all the three directions in these systems, unlike only along x-direction found in the case of pure chalcopyrites [20,22].…”
Section: Optical Propertiesmentioning
confidence: 99%
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