Electronic band gap of Zn2x(CuIn)1−xX2 solid solution series (X=S, Se, Te)

Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

“…Our calculations indicate that the band gap of CuInTe 2 is 0.92 eV, which is consistent with the experimental results of 0.96∼1.06 eV. 15,[27][28][29] The conduction band minimum (CBM) and the valence band maximum (VBM) are both located at the Γ point, which is a common characteristic to the chalcopyrite materials. It should be noted that there are highly degenerate energy bands near the VBM (see circled area of Figure 2(a)), which can simultaneously leads to large Seebeck coefficient and high electrical conductivity.…”

Facile solution-controlled growth of CuInS2 thin films on FTO and TiO2/FTO glass substrates for photovoltaic application

“…Semiconductive materials of I-III-VI 2 -type ternary chalcogenides have attracted much attention because of their excellent optical and electrical properties and important applications in linear and nonlinear optical devices and photovoltaic solar cells [1][2][3]. Within this family, chalcopyrite semiconductor CuInS 2 is considered as a promising candidate for the application in thin film solar cells owing to its high absorption coefficient of 10 5 cm −1 and ideal band-gap energy of 1.53 eV, which is closely matched to the visible part of the solar spectrum [4].…”

Structural aspects of adamantine like multinary chalcogenides

“…ZnX) towards the band gap of the ternary chalcopyritetype end member (e.g. CuInX 2 ) [5]. Moreover a better match of the lattice metrics between substrate (in case of single crystalline substrates e.g.…”