Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

Wei, Jie; Liu, H. J.; Cheng, Lin; Zhang, J.; Liang, Jinghua; Jiang, Peiheng; Fan, D. D.; Shi, Jing

doi:10.1063/1.4935051

Cited by 17 publications

(11 citation statements)

References 36 publications

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“…However, it is of importance to note that the S and m* (Figure 2 c) were sharply reduced in the CuInTe 1.98 M 0.02 samples, fundamentally, it can be ascribed to that the doubly degenerate band Γ 5V [ 16,21 ] of CuInTe 2 tends to split into two non-degenerate bands at Γ point (Figure 2 e,f) in the high doping content samples, which has not been noticed in the CuInTe 2 compounds and may be also the reason for the low Seebeck coeffi cient observed in other high doping content CuInTe 2 samples. [ 21,22 ] Therefore, the Figure S5, Supporting Information) from the κ ; the κ e is calculated by Wiedemann−Franz law κ e = LTσ , where L is the Lorenz number and estimated by the reduced Fermi energy and scattering parameter. [ 24 ] It can be seen that both the κ and κ l of the doped samples are lower than that of the undoped CuInTe 2 at room temperature, while a negligible variation of both the κ and κ l can be readily observed at high temperatures.…”

Section: Anion Substitutionmentioning

confidence: 95%

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Luo

Jiang

et al. 2016

Advanced Energy Materials

132

133

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In addition, it is of importance to note that a high power factor ( S 2 / ρ ) is also indispensable for a given TE material to maximize its output power. [ 3 ] Therefore, by taking account of the practical application, a simultaneously optimization in the electrical and thermal transport properties of TE materials is imperative to maximize the output power and conversion efficiency concurrently. Recently, some strategies have been proved to be effective and even high ZT values greater than 2.0 have been achieved in the Pb-based TE materials, [ 4,5 ] such as the band convergence, [ 6 ] electronic density of states (DOS) distortion, [ 7 ] carrier energy barrier fi ltering, [ 8 ] and the conduction (valence) band modifi cation [ 9 ] to enhance Seebeck coefficient for high power factor; while defect engineering, [ 10 ] nanostructuring, [ 11 ] and multiscale hierarchical architecturing [ 12 ] to enhance the scattering of phonons for low thermal conductivity. However, the environmentally hazardous Pb element prevents them from widespread application. Therefore, it is of signifi cance to develop eco-friendly TE materials for middle temperature application, such as Mg 2 Si, [ 13 ] Half-Heusler, [ 14 ] and BiCuSeO [ 15 ] based TE materials.More recently, chalcopyrite CuInTe 2 is being considered as a promising p-type TE material because of the merits of environmentally friendly chemical component, intrinsically high electrical conductivity, and high Seebeck coeffi cient owing to the degenerate energy bands near the valence band maximum (VBM). [ 16 ] Thus many efforts have been made theoretically and experimentally [17][18][19][20][21][22] to enhance its TE performance already, such as Cu defi ciency and cation substitution. However, since there are two cation sites (Cu and In) in CuInTe 2 , cation substitution often lacks specifi city and may generate both electron and hole simultaneously, making it diffi cult to enhance the electrical transport properties substantially. Besides, the less phonon scattering, mainly by point defects originated from chemical component regulation, rendering its thermal conductivity is still relatively high. It is well known that refi ning the microstructure into nanoscale is often effective in optimizing thermal transport properties, yet the electrical transport properties are usually deteriorated due to the inevitably scattering of carriers, as typical shown in the CuInTe 2 /graphene [ 23 ] and our

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Section: Anion Substitutionmentioning

confidence: 95%

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Luo

Jiang

et al. 2016

Advanced Energy Materials

132

133

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“…Owing to the inherent presence of cation vacancy and unique crystal structures, Cu–In–Te ternary compounds with a chalcopyrite structure (e.g. I 4̅2 d ) have recently attracted much attention in thermoelectrics. − Examples include experimentally prepared Cu 0.95 Ag 0.05 InTe 2 (ZT = 1.07 at 823 K), Cu 0.75 Ag 0.2 InTe 2 (ZT = 1.24 at ∼850 K), In 2 O 3 –CuInTe 2 and ZnX-CuInTe 2 . Since the cation vacancy engineering in these compounds can be used to tune the density of carrier ( n ) (or mobility μ), , similar to those observed in many Cu–Ga–Te compounds, − the TE performance can get vastly improved.…”

Section: Introductionmentioning

confidence: 99%

Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu–In–Te Systems

Ren

Han

Ying

et al. 2019

ACS Appl. Mater. Interfaces

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Thermoelectric materials are of imperative need on account of the worldwide energy crisis. However, their efficiency is limited by the interplay of high electrical and lower thermal conductivities, that is, the figure of merit (ZT). Owing to their unique crystal structures, Cu–In–Te-based chalcogenides are suitable for both and thus have attracted much attention recently as potential thermoelectrics. Here we explore a newly developed Cu–In–Te derivative compound Cu3.52In4.16Te8. With a proper adjustment of Cu2Te doping, this material shows an ultralow lattice thermal conductivity (κL) (0.3 WK–1m–1) and, consequently, a figure of merit (ZT) as high as 1.65(±0.15) at 815 K: the highest value reported for p-type Cu–In–Te to date. The reduction in κL is directly related to the alteration of local symmetry around the interstitial Te, resulting in an effectively optimized phonon transport through localized “rattling” of the same. Although the Hall carrier concentration reduces upon Cu2Te addition due to the unpinning of the Fermi level (E Fermi) toward the conduction band minimum, the power factor remains stable. The knowledge depicted here not only demonstrates the potential of Cu3.52In4.16Te8-based alloys as a promising TE, but also provides guidelines for developing further high-performance thermoelectric materials by enhancing the electronic conductivity.

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“…For instance, Wei et al predicted s = 3.85 × 10 4 S m −1 at 300 K and n = 2.69 × 10 19 cm −3 which is approximately a 100% error with respect to experimental values. 50 AgInTe 2 presents slightly lower s values than CuInTe 2 as ptype semiconductor but around one order of magnitude higher as n-type semiconductor (Fig. 3a).…”

Section: Resultsmentioning

confidence: 93%

Harnessing the unusually strong improvement of thermoelectric performance of AgInTe₂ with nanostructuring

et al. 2023

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Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

Cited by 17 publications

References 36 publications

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu–In–Te Systems

Harnessing the unusually strong improvement of thermoelectric performance of AgInTe₂ with nanostructuring

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Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

Cited by 17 publications

References 36 publications

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe2 Thermoelectric Materials

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe2 Thermoelectric Materials

Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu–In–Te Systems

Harnessing the unusually strong improvement of thermoelectric performance of AgInTe2 with nanostructuring

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Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Harnessing the unusually strong improvement of thermoelectric performance of AgInTe₂ with nanostructuring