Electronic band structure and Shubnikov–de Haas effect in two-dimensional semimetallic InAs/GaSb nanostructure superlattice

Boutramine, Abderrazak; Nafidi, A.; Barkissy, Driss; El‐frikhe, Es‐saïd; Charifi, H.; Elanique, A.; Chaib, H.

doi:10.1007/s00339-015-9561-x

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…The origin of the energy E has been chosen at the top of InAs valence band as shown in the Figure 1. In each host material and for a given energy, the two-band Kane model [10] gives the wave vector (k 2 i + k 2 p ). Therefore, the energy E of the light particles (electron and light hole) is given by:…”

Section: Theory and Band Structurementioning

confidence: 99%

“…As a result, the tension in the InAs layer lowers the conduction subbands (E i ) whereas the compression in the In 1−x Ga x Sb layer raises the heavy hole subband (HH i ). Therefore, a very smaller band gap can be optimized with a reasonably thinner period which is not possible in InAs/GaSb SL [2]. The most important advantage of this SL lies in the fact that the presence of strain within this SL layers reduces the Auger recombination process and improves significantly the carrier lifetime and detectivity [3].…”

Section: Introductionmentioning

confidence: 99%

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Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection

et al. 2020

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We have used the envelope function formalism to investigate the bands structure of LWIR type II SL InAs (d 1 = 2. 18d 2)/In 0.25 Ga 0.75 Sb(d 2 = 21.5 Å). Thus, we extracted optical and transport parameters as the band gap, cut off wavelength, carriers effective mass, Fermi level and the density of state. Our results show that the higher optical cutoff wavelength can be achieved with smaller layer thicknesses. The semiconductor-semi metal transition was studied as a function of temperature. Our results permit us the interpretations of Hall and Shubnikov-de Haas effects. These results are in agreement with experimental results in literature and a guide for engineering infrared detectors.

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Section: Theory and Band Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection

et al. 2020

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Correlation between electronic bands structure and magneto-transport properties of nanostructure type II superlattice for terahertz detection

Boutramine

Nafidi

Barkissy

et al. 2019

Superlattices and Microstructures

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Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications

Singh,

Muralidharan

2024

Journal of Applied Physics

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A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking InSb/GaAs at the interface using the 8-band k.p approach, we demonstrate the impact of InAs and GaSb widths on the bandgap, carrier concentration, and the oscillator strength for type-II superlattice absorbers. Subsequently, the alteration of these characteristics due to the extra AlSb layer in the M superlattice absorber is investigated. Extending our models for determining TE- and TM-polarized optical absorption, our calculations reveal that the TE-polarized absorption shows a substantial influence near the conduction-heavy hole band transition energy, which eventually diminishes, owing to the dominant TM contribution due to the conduction-light hole band transition. Extending our analysis to the dark currents, we focus mainly on Schokley–Read–Hall recombination and radiative recombination at lower temperatures and show that Schokley–Read–Hall dominates at low-level injection. We show that short-wavelength and mid-wavelength M superlattice structures exhibit higher quantum efficiency than the corresponding same bandgap type-II superlattice with the lower diffusion dark current. Furthermore, we analyze the density of states blocked by the barrier, crucial for XBp photodetector after absorber examination. Our work, thus, sets a stage for a holistic and predictive theory aided analysis of the type-II superlattice absorbers, from the atomistic interfacial details all the way to the dark currents and absorption spectra.

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Electronic band structure and Shubnikov–de Haas effect in two-dimensional semimetallic InAs/GaSb nanostructure superlattice

Cited by 4 publications

References 27 publications

Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection

Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection

Correlation between electronic bands structure and magneto-transport properties of nanostructure type II superlattice for terahertz detection

Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications

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