Electronic band structures and effective-mass parameters of wurtzite GaN and InN

Yeo, Ye; Chong, Tow Chong; Li, M. F.

doi:10.1063/1.366847

Cited by 286 publications

(123 citation statements)

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“…These values are superior to the ones reported for 350 µm thick HVPE-grown m-plane GaN films on LiAlO 2 which proves the high quality of our deposition process [20]. The anisotropic values for the mobility are even more astonishing because of the slightly higher effective electron masses for GaN in [0001] direction which theoretically should result in a ~12% lower mobility in this direction [21,22]. However, in our case up to 20% higher electron mobilities along the GaN c-axis are detected.…”

Section: Methodsmentioning

confidence: 50%

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Mauder

Reuters

Khoshroo

et al. 2010

Journal of Crystal Growth

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The anisotropic film properties of m-plane GaN deposited by metal organic vapour phase epitaxy (MOVPE) on LiAlO 2 substrates are investigated. To study the development of layer properties during epitaxy, the total film thickness is varied between 0.2 and 1.7 µm. A surface roughening is observed caused by the increased size of hillock-like features. Additionally, small steps which are perfectly aligned in (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes appear for samples with a thickness of ~0.5 µm and above. Simultaneously, the X-ray rocking curve (XRC) full width at half maximum (FWHM) values become strongly dependent on incident X-ray beam direction beyond this critical thickness. Anisotropic in-plane compressive strain is initially present and gradually relaxes mainly in the [11][12][13][14][15][16][17][18][19][20] direction when growing thicker films. Low-temperature photoluminescence (PL) spectra are dominated by the GaN near-band-edge peak and show only weak signal related to basal plane stacking faults (BSF). The measured background electron concentration is reduced from ~10 20 cm -3 to ~10 19 cm -3 for film thicknesses of 0.2 µm and ~1 µm while the electron mobilities rise from ~20 to ~130 cm 2 /Vs. The mobilities are significantly higher in [0001] direction which we explain by the presence of extended planar defects in the prismatic plane. Such defects are assumed to be also the cause for the observed surface steps and anisotropic XRC broadening. . This is especially helpful for the design of thick quantum wells or double heterostructure devices to mitigate the effects of the efficiency droop [2]. Limited availability of large-scale freestanding nonpolar GaN wafers as well as their high price favours the heteroepitaxial growth on foreign substrates. (100) LiAlO 2 is an interesting option for this approach because of the very low lattice mismatch with m-plane (1-100) GaN. It amounts to -1.7 % and -0.3 % in [11][12][13][14][15][16][17][18][19][20] and [0001] direction of GaN, respectively, giving rise to anisotropic strain in the layer [3]. In addition to that, the material is produced by the comparably cheap Czochralski pulling method. A major disadvantage of this substrate is the thermal and chemical instability which demands special care on the epitaxial process and leads to highly n-type doped films, most likely related to oxygen incorporation [4]. The growth of high-quality m-plane GaN on LiAlO 2 was already reported using various techniques as molecular beam epitaxy (MBE) [5], hydride vapour phase epitaxy (HVPE) [6] and metal organic vapour phase epitaxy (MOVPE) [7]. However, only few reports contain detailed data on the anisotropic film properties [8]. In this contribution, we present an elaborate investigation on the development of the anisotropic crystal properties during MOVPE of m-plane GaN on LiAlO 2 .

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Section: Methodsmentioning

confidence: 50%

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Mauder

Reuters

Khoshroo

et al. 2010

Journal of Crystal Growth

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“…[58]. b Reference [44] c Reference [1] d Reference [2] e Reference [3] f Reference [4] g Reference [60] h Reference [61] i Reference [62] j Reference [5] k Reference [63] l Reference [36] m Reference [14] x dC11/dP dC12/dP dC44/dP dB/dP dG/dP dE/dP /dP dC12/dP dC13/dP dC33/dP dC44/dP dC66/dP dB/dP dG/dP dE/dP ZB "poisson's ratio" WZ "poisson's ratio" ZB "Rc" WZ "Rc" …”

Section: Acknowledgmentsmentioning

confidence: 99%

Ab initio study of InxGa1−xN – Performance of the alchemical mixing approximation

Scharoch

Winiarski

Polak

2014

Computational Materials Science

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The alchemical mixing approximation which is the ab initio pseudopotential specific implementation of the virtual crystal approximation (VCA), offered in the ABINIT package, has been employed to study the wurtzite (WZ) and zinc blende (ZB) In x Ga 1−x N alloy from first principles. The investigations were focused on structural properties (the equilibrium geometries), elastic properties (elastic constants and their pressure derivatives), and on the band-gap. Owing to the ABINIT functionality of calculating the Hellmann- The idea of tuning the band-gap, although simple in principle, is connected with a variety of practical problems like lattice constants mismatch of parent

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“…In addition, while initial experimental results suggested an electron effective mass of 0.11m 0 [12], more recent experimental measurements have instead suggested an electron effective mass of 0.04m 0 [3,8] for this material (here m 0 denotes the free electron mass).…”

mentioning

confidence: 99%

Nonlinear electronic transport behavior in Indium Nitride

Rodrigues

2012

Materials Chemistry and Physics

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keywords: Applications of Nonlinear Sciences; Applications in Engineering and Nanoscience.In recent decades the III-Nitrides semiconductors (like Gallium Nitride, Aluminium Nitride, and Indium Nitride) have been the object of intensive study. This is a consequence of the realization of the long-awaited possibility of growing satisfactory samples, leading to the increased development of electronic and opto-electronic devices (blue diodes, blue lasers, etc.) of large technological and industrial interest [1,2,3]. The GaN and AlN are semiconductors with band gaps and other characteristics that largely differ from those of InN (it may be noticed that it resembles the case of InAs in the family of the III-V semiconductors). Recently, the band gap of InN has been clarified as being 0.64 eV [4][5][6][7][8], which corresponds to the near infra-red region and enables AlN-GaN-InN-based nitride materials to be used for fabricating devices operating from the UV to near infra-red range. These properties of nitride semiconductors are being used to develop high efficiency tandem-type solar cells.Further, InN can be readily made as the n-type by introducing crystal defects [3]. Of large relevance are the studies of their optical and transport properties in situations in which they are working in far-fromequilibrium conditions. When under the action of intermediate to strong electric fields their transport properties are nonlinear (in the electric field intensity).We have considered such question in a series of papers (e.g. Refs. [9-10]), and in the present paper we are adding a study on the coupled influence of the electric field strength and the concentration of carriers on the nonlinear mobility (that is, a mobility dependent nonlinearly on field and concentration) in n-doped InN.In the study of transport phenomena it has been used variations of computational modeling approaches (in the domain of Nonequilibrium Molecular Dynamics and related to Monte Carlo computational methods). On the other hand, improved analytical methods, that is, nonlinear quantum kinetic theories for studying physical phenomena in systems arbitrarily departed from equilibrium, are desirable. An advantage that they may present in relation to the computational-modeling methods resides in that the explicit equation of motion for the basic nonequilibrium thermodynamic variables, which characterize the dissipative macrostate of the system, provide a better physical insight and interpretation of the results.Nonequilibrium quantum kinetic theories based on various intuitive techniques and ideas are presently available. One particularly appropriate for the purpose just stated, and which offers an elegant and concise analytical treatment of the theory of irreversible processes, has been derived from an approach based on a nonequilibrium ensemble formalism (since it can be founded on a variational principle, consisting in the maximization of the informational entropy in the statistical description, for short it is referred to as MaxEnt-NESOM [17][18][19][20][21]...

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Electronic band structures and effective-mass parameters of wurtzite GaN and InN

Cited by 286 publications

References 108 publications

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Ab initio study of InxGa1−xN – Performance of the alchemical mixing approximation

Nonlinear electronic transport behavior in Indium Nitride

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