Electronic correlation effects and Coulomb gap in the Si(111)-
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-Sn surface

Odobescu, A. B.; Maizlakh, A. A.; Fedotov, N. I.; Zaĭtsev-Zotov, S. V.

doi:10.1103/physrevb.95.195151

Cited by 9 publications

(11 citation statements)

References 29 publications

(31 reference statements)

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“…Moreover, with ARPES a gap energy of around 200 meV was found [9]. Scanning tunneling spectroscopy (STS) and conductivity measurements indicate that the MIT is driven by strong electron correlations [10,11].…”

Section: Introductionmentioning

confidence: 94%

α -Sn phase on Si(111): Spin texture of a two-dimensional Mott state

et al. 2018

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The α-Sn reconstruction on Si(111) is a prototype system for a two-dimensional Mott phase. In this study we performed spin-resolved photoemission experiments and analyzed in detail the spin structure of this electronically correlated surface state. The analysis of the spin-integrated bands as well as the spin texture of the surface states along different crystallographic directions provide clear evidence for the formation of collinear antiferromagnetic (2 √ 3 × √ 3) domains, while the Sn reconstruction reveals a (√ 3 × √ 3) symmetry. The Rashba splitting of the highest occupied Mott state was found to be k = 0.05 Å −1 , i.e., the α-Sn phase should be termed a weakly spin-orbit coupled Mott system.

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Section: Introductionmentioning

confidence: 94%

α -Sn phase on Si(111): Spin texture of a two-dimensional Mott state

et al. 2018

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“…For the system Sn/Si(111) ( √ 3× √ 3), the prevailing experimental and theoretical view [6,7] asserts that Mott-Hubbard physics governs the electronic structure over the whole temperature range down to liquid helium temperatures, and is responsible for the formation of a gap in the electronic spectrum [8][9][10]. This is in contrast to the more complex physics in the related system Sn/Ge(111) (…”

Section: Introductionmentioning

confidence: 99%

“…We briefly summarize the present understanding of the physics at the Sn/Si(111) surface that has been gained from experimental studies: Experiments using scanning tunneling spectroscopy (STS) indicate that the Sn/Si(111) ( √ 3 × √ 3) system undergoes a metal-to-insulator transition below 30 K. Below this temperature, the pseudo-gap near the Fermi energy develops into a sharp gap [6] whose width is reported to be 35 meV according to recent measurements employing scanning tunneling spectroscopy (STS) [10]. Below and above the Fermi energy E F , experiments using angle-resolved photoemission (ARPES) [6] or inverse photoemission (KIR-PES) [16] show pronounced quasiparticle peaks.…”

Section: Introductionmentioning

confidence: 99%

Phonon-induced electronic relaxation in a strongly correlated system: The Sn/Si(111) (3×3) adlayer revisited

Zahedifar

Kratzer

2019

Phys. Rev. B

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The ordered adsorbate layer Sn/Si(111) ( √ 3 × √ 3) with coverage of one third of a monolayer is considered as a realization of strong electronic correlation in surface physics. Our theoretical analysis shows that electronhole pair excitations in this system can be long-lived, up to several hundred nanoseconds, since the decay into surface phonons is found to be a highly non-linear process. We combine first-principles calculations with help of a hybrid functional (HSE06) with modeling by a Mott-Hubbard Hamiltonian coupled to phononic degrees of freedom. The calculations show that the Sn/Si(111) ( √ 3 × √ 3) surface is insulating and the two Sn-derived bands inside the substrate band gap can be described as the lower and upper Hubbard band in a Mott-Hubbard model with U = 0.75 eV. Furthermore, phonon spectra are calculated with particular emphasis on the Sn-related surface phonon modes. The calculations demonstrate that the adequate treatment of electronic correlations leads to a stiffening of the wagging mode of neighboring Sn atoms; thus, we predict that the onset of electronic correlations at low temperature should be observable in the phonon spectrum, too. The deformation potential for electron-phonon coupling is calculated for selected vibrational modes and the decay rate of an electron-hole excitation into multiple phonons is estimated, substantiating the very long lifetime of these excitations.

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“…4). Most important, the splitting of the bands and the bandwidth in the CDW phase are not due to the Mott-Hubbard interaction, as commonly accepted 21,22,55 , but they are a structural effect determined by the the non-locality of the exchange electron-electron interaction between the Pb layer and the Ge substrate. Finally, we remark that this important result is strictly confirmed by ARPES data as shown in Fig.…”

Section: Low-t 3 × 3 Reconstruction Inmentioning

confidence: 90%

Charge density wave in single-layer Pb/Ge(111) driven by Pb-substrate exchange interaction

Tresca,

Calandra

2021

Preprint

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Electronic correlation effects and Coulomb gap in the Si(111)- (3×3) -Sn surface

Cited by 9 publications

References 29 publications

α -Sn phase on Si(111): Spin texture of a two-dimensional Mott state

α -Sn phase on Si(111): Spin texture of a two-dimensional Mott state

Phonon-induced electronic relaxation in a strongly correlated system: The Sn/Si(111) (3×3) adlayer revisited

Charge density wave in single-layer Pb/Ge(111) driven by Pb-substrate exchange interaction

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