Electronic loss mechanisms in chalcopyrite based heterojunction solar cells

Rau, Uwe; Jasenek, A.; Schock, H.W.; Engelhardt, Felix; Meyer, Th.

doi:10.1016/s0040-6090(99)00762-2

Cited by 127 publications

(71 citation statements)

References 13 publications

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“…where J 00 is a prefactor which is proportional to the concentration N of recombination centers in the bulk of the CIGS film [43]. Therefore, the open-circuit voltage deficit decreased with the decrease of the diode ideality factor and the recombination centers.…”

Section: Characteristics Of Cigs Solar Cells Prepared By Various Depomentioning

confidence: 99%

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

et al. 2018

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Abstract:The two-step process including the deposition of the metal precursors followed by heating the metal precursors in a vacuum environment of Se overpressure was employed for the preparation of Cu(In,Ga)Se 2 (CIGS) films. The CIGS films selenized at the relatively high Se flow rate of 25 Å/s exhibited improved surface morphologies. The correlations among the two-step process parameters, film properties, and cell performance were studied. With the given selenization conditions, the efficiency of 12.5% for the fabricated CIGS solar cells was achieved. The features of co-evaporation processes including the single-stage, bi-layer, and three-stage process were discussed. The characteristics of the co-evaporated CIGS solar cells were presented. Not only the surface morphologies but also the grading bandgap structures were crucial to the improvement of the open-circuit voltage of the CIGS solar cells. Efficiencies of over 17% for the co-evaporated CIGS solar cells have been achieved. Furthermore, the critical factors and the mechanisms governing the performance of the CIGS solar cells were addressed.

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Section: Characteristics Of Cigs Solar Cells Prepared By Various Depomentioning

confidence: 99%

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

et al. 2018

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“…To quantify the contribution of the tunnelling, we analyze the temperature dependence of the ideality factor with Eq. (1) [11,12]:…”

Section: Defects D1mentioning

confidence: 99%

“…Equation (1) developed for Schottky junction has been successfully used to describe forward current transport mechanisms in various Cu-chalcopyrite based solar cells [12,13,14]. From Fig.…”

Section: Defects D1mentioning

confidence: 99%

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)₂ and its correlation with solar cells performances

Darga

Djebbour

Mencaraglia

et al. 2008

Phys. Status Solidi (c)

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Electrodeposited CuIn(S,Se)2 based solar cells with varying CdS buffer layer thicknesses were studied by admittance spectroscopy. An electrically active defect was identified. Its density of states which varies with CdS layer deposition process was found to be correlated with solar cell performance. This defect seems to be CdS/CuIn(S,Se)2 interface defect or to be located within the grain boundaries of the absorber layer. Direct dark I–V measurements reveal that the dominant recombination mechanism is a tunnelling assisted process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Hence, the structure of Eqs. 12.1 and 12.2 is not affected by the recombination mechanism [9]. To calculate the dependence of the short-circuit current density j SC , the open-circuit voltage V OC , the fill factor FF and the efficiency η on the bandgapenergy from Eq.…”

Section: Device Preparation and Characterisationmentioning

confidence: 99%

Bandgap Variations for Large Area Cu(In,Ga)Se2 Module Production

Kniese

Voorwinden

Menner

et al. 2006

Wide-Gap Chalcopyrites

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The development of large area Cu(In,Ga)Se 2 photovoltaic (PV) modules has reached a remarkable level. Nevertheless, scope for further improvement lies in the ability of the Cu(In,Ga)(Se,S) 2 alloy system to vary the bandgap via the In-to-Ga or the S-to-Se ratio. This chapter investigates the possible gain in efficiency resulting from a better match to the solar spectrum, reduced losses related to the monolithic integration and an improved temperature coefficient, all of which are achievable by increasing the bandgap energy of the absorber material. Experimental results are compared to theoretical predictions and the deviations are discussed. Furthermore, graded bandgap structures, obtainable by introducing compositional profiles in the depth of the absorber, have demonstrated their potential to improve the conversion efficiency. Nevertheless, so far the potential of graded bandgap structures has not been fully exploited for large area module production. In this chapter, the technical feasibility of depositing absorbers with a graded bandgap on a large area is shown and the effect on the electrical characteristic is discussed.

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Electronic loss mechanisms in chalcopyrite based heterojunction solar cells

Cited by 127 publications

References 13 publications

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)₂ and its correlation with solar cells performances

Bandgap Variations for Large Area Cu(In,Ga)Se2 Module Production

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Electronic loss mechanisms in chalcopyrite based heterojunction solar cells

Cited by 127 publications

References 13 publications

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances

Bandgap Variations for Large Area Cu(In,Ga)Se2 Module Production

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Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)₂ and its correlation with solar cells performances