Electronic processes in the photo-crystallization of vitreous selenium

Dresner, J.; Stringfellow, G. B.

doi:10.1016/0022-3697(68)90075-9

Cited by 163 publications

(40 citation statements)

References 19 publications

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“…Illuminated Se samples were found to be partially crystallized, which may present the photo-enhanced crystallization, being known for Se for a long time [15,16]. However, no appreciable anisotropic structures were detected.…”

Section: Resultsmentioning

confidence: 90%

Photoinduced vector deformations of semi‐freely fixed glassy As‐S(Se)

Tanaka

Mikami

2011

Phys. Status Solidi C

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The chalcogenide glass is known to exhibit a variety of vector photo‐deformations. The present work studies the deformation in glassy As‐S(Se) films and flakes, which are laid on viscous grease layers. Upon bandgap illumination of linearly polarized cw laser light, the film and flake exhibit anisotropic wrinkles and extensions, respectively, while the directions change with the composition. As2S(Se)3 samples deform in the direction orthogonal to the electric field of the light, but pure Se deforms in parallel to the electric field. And, in the As‐Se system, an orthogonal‐parallel directional change appears at the As content of ∼1 at.%. X‐ray diffraction and Raman‐scattering spectroscopy detect no anisotropic atomic changes. The orthogonal deformation has been ascribed to optical pressure, while the parallel in Se may be triggered by polariton‐plasmon waves. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 90%

Photoinduced vector deformations of semi‐freely fixed glassy As‐S(Se)

Tanaka

Mikami

2011

Phys. Status Solidi C

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“…Ilyas et al [7] found that the change in refractive index under the influence of light, for Ga x Se 100-x glasses, makes them useful for optical data storage. It is well known that selenium exhibits many photoinduced phenomena [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Effect of illumination on linear and nonlinear optical parameters of Ga5Se95 thin films

Zedan

El-Nahass

2015

Appl. Phys. A

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Ga 5 Se 95 films were prepared by using thermal evaporation technique. X-ray showed that the powder samples as well as thin-film samples are crystalline in nature. The optical constants (refractive index n and rad absorption index k) of Ga 5 Se 95 films were calculated using Murmann's exact method. The photoinduced red shift of the optical gap (photodarkening) appeared in Ga 5 Se 95 films after illumination. The indirect energy gap was decreased from 1.75 eV for the as-deposited films to 1.65 eV for illuminated thin films 1 h. The concentration of color centers was calculated by using Gaussian fitting for peaks of the absorption coefficient (a) and was found to increase from 5.6 9 10 24 to 6.2 9 10 24 cm -3 with illumination time. The effect of illumination on the nonlinear optical susceptibility (v (3) ) and nonlinear refractive index (n 2 ) is estimated using empirical relations.

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“…It should be noted that photocrystallization of a-Se has been observed and studied by many researchers [14][15][16]. In the specific case of a-Se-based HARP cameras, the presence of crystallographic defects causes white blemishes to appear on images of the video target.…”

Section: Discussionmentioning

confidence: 97%