Electronic properties and the nature of metal–insulator transition in NdNiO3 prepared at ambient oxygen pressure

Abstract

We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m* ~ 8me) in the metallic state indicate the narrow character of the 3d band. The electric conduction at low temperatures (T = 2 -20 K) is governed by the variable range hopping of the charge carriers.

Semiconducting nature and thermal transport studies of ZrTe3

“…for ZrTe3 polycrystalline compounds, we tried to fit the data within the framework of Arrhenius, weak localization, and Mott's Variable Range Hopping (VRH) model. The VRH model is observed to describe the semiconducting behavior better for our polycrystalline compounds [22][23][24][25]. We have shown ln(T) versus T -1/4 plots for four samples (all grown at 700 0 C) in fig.…”

“…The red line in the fig. 8 corresponds to the fit to expression ( ) = 0 ( 0 ) 1 4 ⁄ for VRH for 3-D compounds [22][23][24][25][26]. Here T0 is the characteristic ) [26].…”

“…shows the variable range hopping (VRH) in different T regions on four samples (S1 to S4) of ZrTe3 700 o C temperature, which represents the degree of disorder in the samples. Although all the samples are prepared at same temperature, value of T0 was found to vary from 198 K to 17,618 K. The T0 can be used to estimate the inverse localization length ; 1/4 (N(EF)  1.1910 22 eV -1 cm -3 estimated from the DFT calculations)[20,25,26]. The calculated values of T0, d, and  are shown in the table-I.The hopping distance d (i.e.…”

Charge-transfer-induced interfacial ferromagnetism in La0.7Sr0.3MnO3/NdNiO3

“…Nevertheless, by surprise, an exchange bias was observed in LSMO/LNO [16,17,20], and it is yet unclear what is the underlying mechanism and if it offers sufficient tunability of the unidirectional magnetic anisotropy. By contrast, the NNO thin films do exhibit an antiferromagnetic ground state which may be optimized against strain, dimensionality, and other intrinsic and extrinsic constraints [26][27][28][29][30][31][32][33][34][35].…”

NMR Evidence of Antiferromagnetic Spin Fluctuations in Nd$_{0.85}$Sr$_{0.15}$NiO$_2$

“…Nd 0.85 Sr 0.15 NiO 3 [31] and Nd 4 Ni 3 O 10 [27] are made without hydrogen annealing, and Nd 0.85 Sr 0.15 NiO 2 and Nd 4 Ni 3 O 8 are synthesized after hydrogen annealing from the former two compounds [27,32], respectively. Although NdNiO 3 is insulating and antiferromagnetically ordered below 200 K [33][34][35][36], Nd 0.85 Sr 0.15 NiO 3 shows a metallic behavior at low temperatures [31]. Nd 4 Ni 3 O 10 is also metallic at low temperatures [27,37,38], but Nd 4 Ni 3 O 8 [27] shows an insulating behavior at low temperatures and its magnetic properties remain unknown.…”