Electronic properties of layered phosphorus heterostructures

Quhe, Ruge; Feng, Shenyan; Lü, Jing; Lei, Ming

doi:10.1039/c6cp06583j

Cited by 9 publications

(6 citation statements)

References 52 publications

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“…In addition to electronic properties, other aspects of blue P, such as thermal conductivity, superconductivity, optical and magnetic properties, , have also been theoretically investigated. To achieve real applications, many vertical heterostructures based on blue P were designed, e.g., black P/blue P, − blue P/graphene, blue P/MS 2 (M = Mo, Nb, Ta), , and g-ZnO/blue P . Recently, blue P was also proposed to be a promising candidate for gas molecular sensors …”

Section: Introductionmentioning

confidence: 99%

Initial Growth Mechanism of Blue Phosphorene on Au(111) Surface

2017

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Blue phosphorene (blue P), a new two-dimensional allotrope of phosphorus, has attracted great attentions due to its high carrier mobility, suitable band gap and appreciable stability comparable to black phosphorene (black P). Motivated by recent experimental success in synthesizing monolayer blue P on Au(111) surface, here we investigate the nucleation mechanism and growth behavior of P N clusters on Au(111) substrate by ab initio calculations. During the initial growth stage, P N clusters transform from dispersed atoms to zigzag chain at N = 4, and further turn to ring-based one-dimensional chain at N = 11. This peculiar behavior is ascribed to the competition between the interaction among P atoms and the attraction on P atoms by Au substrate. On the basis of the interaction energies between black/blue phosphorene and Au(111) surface, we further propose that monolayer blue P can be synthesized on a chemical active metal substrate, while a relatively inert metal substrate would be beneficial to the growth of monolayer black P. Our theoretical findings offer experimentalists insightful guidance to fabricate monolayer blue P or black P by choosing appropriate substrate.

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Section: Introductionmentioning

confidence: 99%

Initial Growth Mechanism of Blue Phosphorene on Au(111) Surface

2017

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Section: Methodsmentioning

confidence: 99%

“…It is important to address that, in the light of the published works, the single-ξ polarized (SZP) basis set is usually sufficiently accurate for the systems of bulk metal used as the electrode. 58 And, for a FET based on a 2D semiconductor, the doped carriers originating from the metal electrode can greatly shield the electron−electron interaction in the channel. Consequently, the DFT−GGA strategy-based single electron approximation is effective enough to describe the electron behavior of the heavily doped 2D semiconductor and evaluate the SBH in a FET configuration, comparing with the results of the GW method and experiment.…”

Section: Introductionmentioning

confidence: 99%

Pervasive Ohmic Contacts in Bilayer Bi₂O₂Se–Metal Interfaces

Liu

Yang

et al. 2019

J. Phys. Chem. C

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Due to their outstanding gate electrostatics, two-dimensional (2D) semiconducting materials are regarded as promising channel materials used in the next-generation field-effect transistors (FETs). However, a Schottky barrier often existing at the 2D semiconductor–metal interface can evidently degrade the device performance. Very lately, 2D layered semiconducting bismuth oxyselenide (Bi2O2Se) is synthesized and exhibits high carrier mobility and excellent air stability. We conduct a systematic exploration, for the first time, on the interfacial nature of bilayer (BL) Bi2O2Se in contact with six metals (Sc, Ti, Ag, Au, Pd, and Pt) that cover a wide work function range by density functional theory-based band structure calculations and quantum transport simulations in a FET configuration. Remarkably, our results reveal that all the contacts in the lateral direction are n-type Ohmic due to the robust beyond-gap Fermi level pinning at the interface. Experimentally, the actual BL Bi2O2Se FET with a Au/Pd electrode indeed shows an n-type Ohmic contact. Hence, low contact resistance can easily be expected in BL Bi2O2Se devices.

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“…Beyond graphene, h-BN, and TMDs, several other promising semiconductors have also recently attracted much attention in respect to their prominent properties [110, 129–134]. Jeon et al utilized the flexible p-type black phosphorus and ZnO to construct van der Waals heterostructures for junction FETs [135].…”

Section: Integration and Characterization Of 2d Pnictogen Fetsmentioning

confidence: 99%

Two-Dimensional Pnictogen for Field-Effect Transistors

et al. 2019

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Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.

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Electronic properties of layered phosphorus heterostructures

Cited by 9 publications

References 52 publications

Initial Growth Mechanism of Blue Phosphorene on Au(111) Surface

Initial Growth Mechanism of Blue Phosphorene on Au(111) Surface

Pervasive Ohmic Contacts in Bilayer Bi₂O₂Se–Metal Interfaces

Two-Dimensional Pnictogen for Field-Effect Transistors

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Electronic properties of layered phosphorus heterostructures

Cited by 9 publications

References 52 publications

Initial Growth Mechanism of Blue Phosphorene on Au(111) Surface

Initial Growth Mechanism of Blue Phosphorene on Au(111) Surface

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

Two-Dimensional Pnictogen for Field-Effect Transistors

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Product

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Pervasive Ohmic Contacts in Bilayer Bi₂O₂Se–Metal Interfaces