Electronic Properties of Materials

Hummel, Rolf E.

doi:10.1007/978-1-4419-8164-6

Cited by 104 publications

(52 citation statements)

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“…11 A critical requirement for producing outstanding catalysts in a photoelectrochemical cell is not only 40 the ability to boost the kinetics of electrochemical reaction but also the ability to resist electrochemical and photoinduced degradation. Herein, we demonstrate that the combination of controlling a nanostructure of the photoelectrode and using a carbon-based hydrogen evolution catalyst represents a significant 45 step toward enhancing the applied bias photon-to-current efficiency (ABPE). In the present work, a 430 mV decrease in overpotential was achieved using graphene quantum sheets on a silicon nanowire, which exhibited an enhancing effect comparable to that of platinum catalysts.…”

Section: Introductionmentioning

confidence: 99%

N-doped graphene quantum sheets on silicon nanowire photocathodes for hydrogen production

Sim

Moon

et al. 2015

Energy Environ. Sci.

140

105

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Photoelectrochemical hydrogen production from solar energy has been attracting much attention in the field of renewable energy technology. The realization of cost-effective hydrogen production by water splitting requires electrolysis or photoelectrochemical cells decorated with highly efficient co-catalysts. A critical requirement for catalysts in the photoelectrochemical cells is not only the ability to boost the 10 kinetics of a chemical reaction but also to exhibit durability against electrochemical and photoinduced degradation. In the race to replace previous noble-metal catalysts, the design of carbon-based catalysts represents an important research direction in the search for non-precious, environmentally benign, and corrosion-resistant catalysts. Herein, we suggest graphene quantum sheets as a catalyst for the solardriven hydrogen evolution reaction on Si nanowire photocathodes. The optimum nanostructures for the Si 15 photocathodes exhibit an enhanced photocurrent and a lower overpotential compared to those of a planar Si surface. This significant enhancement demonstrates how graphene quantum sheet catalysts can be used to produce Si nanowire photocathodes as hydrogen evolution reaction catalysts with high activity.

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Section: Introductionmentioning

confidence: 99%

N-doped graphene quantum sheets on silicon nanowire photocathodes for hydrogen production

Sim

Moon

et al. 2015

Energy Environ. Sci.

140

105

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“…Figure 1 shows the temperature (T ) dependence of the resistivity along the c-axis (ρ c ) at various pressures. The behaviors at 0.13 and 0.29 GPa are typical of extrinsic semiconductors [10,15]. In the high-temperature region between 300 and 200 K, the resistivity increases as the temperature decreases, which can be regarded as a reduction in the number of carriers that are thermally activated via the excitation across the band gap.…”

Section: Methodsmentioning

confidence: 97%

Two-carrier analyses of the transport properties of black phosphorus under pressure

et al. 2017

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We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of hole with different densities and mobilities. On the other hand, twocarrier analyses of the magnetotransport properties above 1.01 GPa suggest the coexistence of high mobility electron and hole carriers that have almost the same densities, i.e., nearly compensated semimetallic nature of black phosphorus. In the semimetallic state, analyses of both the twocarrier model and quantum oscillations indicate a systematic increase in the carrier densities as pressure increases. An observed sign inversion of Hall resistivity at low magnetic fields suggests the existence of high mobility electrons (∼10 5 cm 2 V −1 s −1 ) that is roughly ten times larger than that of holes, in the semimetallic black phosphorus. We conclude that the extremely large positive magnetoresistance that has been observed in semimetallic state cannot be reproduced by a conventional two-carrier model.

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“…However, it should be noted that the free carriers effect in the semiconductor could be accelerated under the infl uence of an electric fi eld. [ 32 ] The Hall effect measurements were conducted to investigate the dopant-type and carrier concentrations of the as-synthesized MoS 2 NFs. The result revealed that the electron mobility and electron concentration are ≈12.9 cm 2 V −1 s −1 and 4.04 × 10 15 cm 3 , respectively, demonstrating that the MoS 2 NFs belongs to an n-type semiconductor behavior.…”

Section: Doi: 101002/adma201505785mentioning

confidence: 99%

Piezo‐Catalytic Effect on the Enhancement of the Ultra‐High Degradation Activity in the Dark by Single‐ and Few‐Layers MoS₂ Nanoflowers

et al. 2016

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Electronic Properties of Materials

Cited by 104 publications

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N-doped graphene quantum sheets on silicon nanowire photocathodes for hydrogen production

N-doped graphene quantum sheets on silicon nanowire photocathodes for hydrogen production

Two-carrier analyses of the transport properties of black phosphorus under pressure

Piezo‐Catalytic Effect on the Enhancement of the Ultra‐High Degradation Activity in the Dark by Single‐ and Few‐Layers MoS₂ Nanoflowers

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Electronic Properties of Materials

Cited by 104 publications

References 0 publications

N-doped graphene quantum sheets on silicon nanowire photocathodes for hydrogen production

N-doped graphene quantum sheets on silicon nanowire photocathodes for hydrogen production

Two-carrier analyses of the transport properties of black phosphorus under pressure

Piezo‐Catalytic Effect on the Enhancement of the Ultra‐High Degradation Activity in the Dark by Single‐ and Few‐Layers MoS2 Nanoflowers

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Piezo‐Catalytic Effect on the Enhancement of the Ultra‐High Degradation Activity in the Dark by Single‐ and Few‐Layers MoS₂ Nanoflowers