Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurements

Finger, F.; Müller, J.; Malten, C.; Carius, R.; Wagner, H.

doi:10.1016/s0022-3093(99)00802-9

Cited by 66 publications

(47 citation statements)

References 19 publications

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“…LGBs consist of modified amorphous tissue into which most of the defects and H and possibly O atoms concentrate [5,20], increasing the band gap of LGB.…”

Section: Our Model Of Transport and Its Experimental Basismentioning

confidence: 99%

“…In part 4 we illustrate, using new AFM measurements, how AFM artifacts can lead to the incorrect conclusion that the LGBs represent the main transport route and in part 5 we explain what could have been the reasons for misunderstanding of our transport model and conductivity results.…”

Section: Introductionmentioning

confidence: 97%

“…The small grains are connected by twin boundaries and stacking faults, preserving the tetrahedral coordination and so no defects are expected [5] at their boundaries. The 10 -30 nm typical size of the small grains is not sufficient for the formation of the space-charge regions and potential barriers which could block the charge transport.…”

Section: Introductionmentioning

confidence: 99%

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Some controversial points related to transport in microcrystalline silicon

Kočka

Vetushka

Fejfar

2009

Philosophical Magazine

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“…LGBs consist of modified amorphous tissue into which most of the defects and H and possibly O atoms concentrate [5,20], increasing the band gap of LGB.…”

Section: Our Model Of Transport and Its Experimental Basismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

See 1 more Smart Citation

Some controversial points related to transport in microcrystalline silicon

Kočka

Vetushka

Fejfar

2009

Philosophical Magazine

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“…In the subgap region (below 1.1 eV) our optical absorption is approximately proportional to the spin density, as measured by ESR [2,8], and we can fit our data with a simple model for density of gap states, based on a Gaussian distribution of singly occupied dangling bond states in the gap. The model of Inkson [9,10] is used for the spectral dependence of the photoionization cross section of singly occupied dangling bond and it gives an excellent fit to the measured data (look at full curves in Fig.…”

Section: Discussionmentioning

confidence: 71%

Fourier transform infrared photocurrent spectroscopy in microcrystalline silicon

Poruba

Vaněček

Meier

et al. 2002

Journal of Non-Crystalline Solids

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A fast and sensitive method for measurement of spectral dependence of the optical absorption coefficient aðEÞ in thin films of photosensitive materials is introduced. A Fourier transform infrared (FTIR) spectrometer is used with a photoconductive sample as an external detector. Experimental conditions and procedures to obtain aðEÞ from normalized FTIR signal are described and results are compared to the standard measurements of transmittance and reflectance, and the constant photocurrent method. The FTIR method is applied to thin microcrystalline silicon layers and the resulting optical data are discussed in terms of optical absorption connected with defects and disorder. The measurement of aðEÞ is extended down to very low photon energy and reveals the threshold energy for the dangling bond optical absorption in microcrystalline silicon. Photoionization cross section of the silicon dangling bonds is measured over several orders of magnitude and full dynamical range of aðEÞ exceeds nine orders of magnitude.

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“…[11] However, the a-SiEr and lc-SiEr films present g-values of ∼ 2.0030 and ∼ 2.0005, respectively, which are significantly smaller than those of the corresponding series. These small g-values seem to be intrinsically associated with the Er-doping process itself and suggests that n-type films (g −→ 1.998) [16] signal presented by these films (see Figure 3) it was not possible to accurately determine the g-values in these films. Figure 5 shows a series of a-Si films doped with Gd in the ∼ 0 − 7 at.% range, as determined from RBS (see Table I).…”

Section: Methodsmentioning

confidence: 99%

Magnetic properties of amorphous Si films doped with rare-earth elements

Sercheli

Rettori

Zanatta³

2003

Phys. Rev. B

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Amorphous silicon films doped with Y, La, Gd, Er, and Lu rare-earth elements (a-Si:RE) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR), dc-magnetization, ion beam analysis, optical transmission, and Raman spectroscopy. For comparison the magnetic properties of laser-crystallized and hydrogenated a-Si:RE films were also studied. It was found that the rare-earth species are incorporated in the a-Si:RE films in the RE 3+ form and that the RE-doping depletes the neutral dangling bonds (D 0 ) density. The reduction of D 0 density is significantly larger for the magnetic REs (Gd 3+ and Er 3+ ) than for the non-magnetic ones (Y 3+ , La 3+ , Lu 3+ ). These results are interpreted in terms of a strong exchange-like interaction, J RE−DB S RE S DB , between the spin of the magnetic REs and that of the D 0 . All our Gd-doped Si films showed basically the same broad ESR Gd 3+ resonance (∆H pp ≈ 850 Oe) at g ≈ 2.01, suggesting the formation of a rather stable RE-Si complex in these films. 76.30.Kg, 78.66.Jg

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Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurements

Cited by 66 publications

References 19 publications

Some controversial points related to transport in microcrystalline silicon

Some controversial points related to transport in microcrystalline silicon

Fourier transform infrared photocurrent spectroscopy in microcrystalline silicon

Magnetic properties of amorphous Si films doped with rare-earth elements

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