2011
DOI: 10.2174/1874183501104010008
|View full text |Cite
|
Sign up to set email alerts
|

Electronic Properties of Organic Semiconductor/Electrode Interfaces: The Influence of Contact Contaminations on the Interface Energetic

Abstract: During the last decades there has been considerable progress as regards the understanding of OSC/electrode interfaces. In this Review, we summarize recent work on the interface energetics influenced by the presence of electrode surface contamination due to the used ex-situ cleaning procedure prior the interface formation. Contact contaminations of the electrodes essentially affect the interface energetics in particular the interface parameters and therefore the performance of organic electronic devices. These … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2012
2012
2016
2016

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 14 publications
(3 citation statements)
references
References 104 publications
(181 reference statements)
0
3
0
Order By: Relevance
“…This contaminates the interface with environmental carbon, oxygen, and other impurities during sample handling, and this unintentional contamination of the device interfaces can consequently cause significant variation in the device properties. It has been also shown experimentally that introduction of this contamination changes the interface energetics significantly …”
Section: Introductionmentioning
confidence: 98%
See 2 more Smart Citations
“…This contaminates the interface with environmental carbon, oxygen, and other impurities during sample handling, and this unintentional contamination of the device interfaces can consequently cause significant variation in the device properties. It has been also shown experimentally that introduction of this contamination changes the interface energetics significantly …”
Section: Introductionmentioning
confidence: 98%
“…It has been also shown experimentally that introduction of this contamination changes the interface energetics significantly. 15 Within the framework of the present study, we explored the possibility of growing an OS, which is of interest for spintronic applications, in a way different from the traditional routes to improve control over the interface properties and minimize the contamination effects. PLD is a versatile technique for stoichiometric deposition of materials in a controlled way in clean conditions and is generally used for inorganic metals and oxides.…”
Section: ■ Introductionmentioning
confidence: 99%
See 1 more Smart Citation