Electronic properties of polycrystalline graphene under large local strain

He, Xin; Gao, Li; Tang, Ning; Duan, Junxi; Mei, Fuhong; Hu, Meng; Lu, Fangchao; Xu, Fujun; Wang, Xinqiang; Yang, Xuelin; Ge, Weikun; Shen, Bo

doi:10.1063/1.4883866

Cited by 16 publications

(13 citation statements)

References 35 publications

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“…[27][28][29][30][31] Since many physical properties (e.g., electrical and optical) depend on the band structure, band structure tuning is of future importance. Even though for graphene and monolayer TMDs, such tuning through the application of strain was investigated extensively both theoretically and experimentally, [14][15][16][17][18][19][20][21][32][33][34][35][36][37] there are only few theoretical studies on strain engineering in heterostructures, [38][39][40] and experimental insight is still yet to be provided.…”

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confidence: 99%

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Zhu

et al. 2016

Applied Physics Letters

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154

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Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

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confidence: 99%

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Zhu

et al. 2016

Applied Physics Letters

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154

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“…Strain has a significant influence on the transport properties of graphene. For example, the field-effect mobility of graphene tends to decrease in the presence of tensile strain, resulting in the degradation of the device performance 13 . Moreover, random strain fluctuations in graphene can be a dominant source of disorder that limits the scattering of charge carriers, resulting in a decrease in the mobility 15 .…”

Section: Resultsmentioning

confidence: 99%

Spatially resolved Raman spectroscopy of defects, strains, and strain fluctuations in domain structures of monolayer graphene

Lee

Mas’ud

Kim

et al. 2017

Sci Rep

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We report spatially resolved Raman scattering results of polycrystalline monolayer graphene films to study the effects of defects, strains, and strain fluctuations on the electrical performance of graphene. Two-dimensional Raman images of the integrated intensities of the G and D peaks (I G and I D) were used to identify the graphene domain boundaries. The domain boundaries were also identified using Raman images of I D/I G and I 2D/I G ratios and 2D spectral widths. Interestingly, the I D maps showed that the defects within individual domains significantly increased for the graphene with large domain size. The correlation analysis between the G and 2D peak energies showed that biaxial tensile strain was more developed in the graphene with large domain size than in the graphene with small domain size. Furthermore, spatial variations in the spectral widths of the 2D peaks over the graphene layer showed that strain fluctuations were more pronounced in the graphene with large domain size. It was observed that the mobility (sheet resistance) was decreased (increased) for the graphene with large domain size. The degradation of the electrical transport properties of the graphene with large domain size is mainly due to the defects, tensile strains, and local strain fluctuations within the individual domains.

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“…Fingerprints of different types of deformations (e.g., uniaxial, (non)isotropic biaxial, shear, local strains etc.) in the electronic structure of graphene layers, particularly in the possible band‐gap opening, are reported in quite a number of articles . The discrepancies in those articles are recently exemplified in another paper .…”

Section: Introductionmentioning

confidence: 98%

Defect‐Pattern‐Induced Fingerprints in the Electron Density of States of Strained Graphene Layers: Diffraction and Simulation Methods

Radchenko

Tatarenko

Lizunov

et al. 2019

Physica Status Solidi (b)

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The paper combines two theoretical approaches – the method of grazing dynamical diffraction (which allows performing the nondestructive structural diagnostics of defects in the near‐surface layers) with efficient numerical simulation method (which enables computation of electron structure in realistically large systems with millions of atoms) – for studying electronic properties in uniaxially strained graphene layers with point defects: impurity atoms. Electron density of states (DOS) is proved sensitive to the direction of uniaxial tensile deformation and configuration of defects. If defects are distributed orderly, the band gap value (estimated from the DOS curves) varies nonmonotonically versus the stretching deformation along zigzag‐edge direction. In this case, the minimal tensile strain required for the band gap opening is found to be smaller than that for defect‐free graphene, and the maximum band gap value is close to that predicted for failure limit of the defect‐free graphene. The obtained results play a significant part for band gap engineering in graphene: via spatial configuring of defects and external tensile stresses.

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Electronic properties of polycrystalline graphene under large local strain

Cited by 16 publications

References 35 publications

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

Spatially resolved Raman spectroscopy of defects, strains, and strain fluctuations in domain structures of monolayer graphene

Defect‐Pattern‐Induced Fingerprints in the Electron Density of States of Strained Graphene Layers: Diffraction and Simulation Methods

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