Electronic properties of self-assembled rare-earth silicide nanowires on Si(001)

Wanke, Martina; Löser, Karolin; Pruskil, G.; Vyalikh, D. V.; Молодцов, С. Л.; Danzenbächer, S.; Laubschat, C.; Dähne, M.

doi:10.1103/physrevb.83.205417

Cited by 18 publications

(32 citation statements)

References 26 publications

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“…The ground state in this case is a 1D conductor [2] with the low-energy properties of a Luttinger liquid [10]. We expect these systems to be quasi-1D conductors also for t ws = 0 and to yield information that could be relevant for understanding the numerous metallic atomic wires studied experimentally [15][16][17][18][19][20][21][22][23][24][25]. Figure 9 shows the variations of the charge distributions C(n) relative to half-filling as a function of the interaction U .…”

Section: B Metallic Wirementioning

confidence: 99%

“…In particular, numerous experiments show that some of these materials have gapless excitation spectra with strongly anisotropic charge dynamics. The list of good candidate materials for the realization of (quasi-)1D conductors includes In/Si(111) [15], Au/Ge(100) [16][17][18][19][20], Bi/InSb(100) [21], Pt/Ge(100) [22,23], Pb/Si(557) [24], and dysprosium silicide nanowires on Si(001) surfaces [25]. Their properties are sometimes ascribed to Luttinger liquids and sometimes to anisotropic 2D Fermi liquids.…”

Section: Introductionmentioning

confidence: 99%

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Correlated atomic wires on substrates. II. Application to Hubbard wires

2017

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In the first part of our theoretical study of correlated atomic wires on substrates, we introduced lattice models for a one-dimensional quantum wire on a three-dimensional substrate and their approximation by quasi-one-dimensional effective ladder models [arXiv:1704.07350]. In this second part, we apply this approach to the case of a correlated wire with a Hubbard-type electronelectron repulsion deposited on an insulating substrate. The ground-state and spectral properties are investigated numerically using the density-matrix renormalization group method and quantum Monte Carlo simulations. As a function of the model parameters, we observe various phases with quasi-one-dimensional low-energy excitations localized in the wire, namely paramagnetic Mott insulators, Luttinger liquids, and spin-1/2 Heisenberg chains. The validity of the effective ladder models is assessed by studying the convergence with the number of legs and comparing to the full three-dimensional model. We find that narrow ladder models accurately reproduce the quasi-onedimensional excitations of the full three-dimensional model but predict only qualitatively whether excitations are localized around the wire or delocalized in the three-dimensional substrate.

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Section: B Metallic Wirementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Correlated atomic wires on substrates. II. Application to Hubbard wires

2017

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“…a two-dimensional (2D) wetting layer [8,17] coexists with Dy-silicide nanowires. Detailed structure models of Dy-silicide nanowires are proposed [9,18,19,13], and their electronic structure has been investigated on vicinal Si(001), where the nanowires grow unidirectional in direction of the surface steps [6,20,10,13,21]. The measurements show metallic behaviour for the socalled broad dysprosium silicide nanowires and nonmetallic behaviour for the so-called thin dysprosium silicide nanowires.…”

Section: Introductionmentioning

confidence: 98%

“…As a consequence much attention has been focussed on self-organized nano-structures of rare earth metals on silicon surfaces. It has been found that rare earth silicides form different nanowire structures on Si(001) [5][6][7][8][9][10], Si(110) [11] and Si(557) [12].…”

Section: Introductionmentioning

confidence: 99%

Dysprosium-induced nanowires on Ge(001)

et al. 2015

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“…The metallic rare-earth silicides form another family of 1D systems, with phenomenological similarities to the above Bi nanolines; They also received significant attention over the years. [54][55][56][57][58] In these systems, the rareearths give rise to 1D structures due to the anisotropy in the heteroepitaxial strain between the Si(001) surface and the rare-earth silicide, i.e. the rare-earths can obtain a close lattice match with Si(001) in one direction while a large lattice mismatch exists in the orthogonal direction.…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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Electronic properties of self-assembled rare-earth silicide nanowires on Si(001)

Cited by 18 publications

References 26 publications

Correlated atomic wires on substrates. II. Application to Hubbard wires

Correlated atomic wires on substrates. II. Application to Hubbard wires

Dysprosium-induced nanowires on Ge(001)

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

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