Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors

Ikonić, Z.; Srivastava, G. P.; Inkson, J C

doi:10.1103/physrevb.48.17181

Cited by 104 publications

(93 citation statements)

References 36 publications

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“…That can partially be the case here, too, since the HF treated nanowires exhibit 10 meV smaller blueshifts at 9 K than the as-grown nanowires. Another possible cause for this often-seen anomalous blueshift 16,17 could be the high density of twin stacking faults 18 or the presence of wurtzite sections in the nanowire. 19,20 However, also PL spectra from nanowires with twin stacking faults but without the blueshift have been reported.…”

Section: Relative Intensitymentioning

confidence: 99%

Enhanced luminescence from catalyst-free grown InP nanowires

Mattila¹,

Hakkarainen²,

Lipsanen³

et al. 2007

Applied Physics Letters

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The surface effects in the optical properties of catalyst-free grown InP nanowires are investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are studied using low- and room-temperature continuous-wave and time-resolved photoluminescence measurements and transmission electron microscopy. It is shown that the room-temperature photoluminescence intensity is increased by two orders of magnitude after the surface treatment, and that there is also a significant increase in the double-exponential photoluminescence decay time.

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Section: Relative Intensitymentioning

confidence: 99%

Enhanced luminescence from catalyst-free grown InP nanowires

Mattila¹,

Hakkarainen²,

Lipsanen³

et al. 2007

Applied Physics Letters

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“…Twinning or wurtzite/zinc-blende nanowire heterostructures or superlattices should result in a modification of the band structure, generating new forms of band offsets and electronic minibands in a chemically homogeneous material such as GaAs. 21,22 In some cases, the existence of this crystal phase heterostructure has been denominated as the formation of crystal phase quantum dots in the nanowires. 23 From the technological point of view, achieving control of the wurtzite/zinc-blende phases in nanowires may enable the fabrication of new kinds of devices such as quantum wire cascade lasers.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

et al. 2009

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The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

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“…The SF was, therefore, electrically neutral and so there existed no charge around it, as well as around the dislocation core bounding the SF. From the analyses of the sample voltagedependent XSTM images combined with a calculation of a SF in the pure GaAs crystal [14], it was concluded that the SF was not an agglomerate of Si atoms but consisted of Ga and As atoms.…”

Section: Results and Discussion 31 Stacking Faults In Commercial Gaamentioning

confidence: 99%

Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si

Ohno

Taishi

Yonenaga

et al. 2008

Phys. Status Solidi (c)

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Point defects nearby a Frank‐type stacking fault in a commercial GaAs:Si wafer (with the Si concentration of about 1018 cm–3) were examined by ultrahigh‐vacuum cross‐sectional scanning tunneling microscopy (UHVXSTM). The defects were identified as pairs of a Si donor and a Ga vacancy. Even though the pairs were electrically neutral, the Si donors in the pairs might be active when they were in the bulk crystal, since the Ga vacancies in the pairs were considered to be introduced after the UHV‐XSTM specimen preparation. The Si donors might be agglomerated towards the stacking fault, since the Si concentration nearby the stacking fault was rather high in comparison with the surrounding region. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors

Cited by 104 publications

References 36 publications

Enhanced luminescence from catalyst-free grown InP nanowires

Enhanced luminescence from catalyst-free grown InP nanowires

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si

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