Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Liu, Zhengjun; Vähänissi, Ville; Laine, Hannu S.; Lindeberg, Morten; Yli-Koski, Marko; Savin, Hele

doi:10.1002/aelm.201600435

Cited by 10 publications

(5 citation statements)

References 46 publications

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“…As [Cr i ] in most wafers was too low to be determined, only the maximum values that consider 5% relative error in the measured lifetimes are shown in the figure. [Fe i ] was found to be lower compared with those reported in the previous studies . The data measured on an HP mc‐Si ingot from Ref.…”

mentioning

confidence: 51%

Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering

Sun

Liu

Samadi

et al. 2019

Physica Rapid Research Ltrs

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The concentrations of Cr, Fe, Ni, and Cu in a cast‐monocrystalline silicon ingot grown for solar cell applications are reported. Wafers taken from along the ingot are coated with silicon nitride films and annealed, causing mobile impurities to be gettered to the films. Secondary ion mass spectrometry is applied to measure the metal content in the silicon nitride films. The bulk concentrations of the gettered metals in samples along the ingot are found to be: Cr (3.3 × 1010–3.3 × 1011 cm−3), Fe (3.2 × 1011–2.5 × 1012 cm−3), Ni (1.5 × 1012–1.3 × 1013 cm−3), and Cu (7.1 × 1011–3.2 × 1013 cm−3). For each metal, the lower limit is measured on the wafer from the middle of the ingot, and the higher limit is measured on wafers from the bottom or the top. The results are compared with similar data recently measured on a high‐performance multicrystalline silicon ingot. The results provide insights into the total bulk concentrations of the metals in cast‐grown ingots.

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mentioning

confidence: 51%

Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering

Sun

Liu

Samadi

et al. 2019

Physica Rapid Research Ltrs

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“…Some of the solar cells, particularly those fabricated on wafers from the 60–80 mm ingot height position and gettered at 811 °C, deteriorated in solar cell efficiency, V OC , and FF. This can be attributed to the proximity of the wafer’s position to the seeds, where the concentration of impurities is usually high, , together with the existence of multicrystalline grains (Figure ). Low temperature gettering (820 °C) has been reported to be less effective in removing precipitated impurities in multicrystalline silicon than high-temperature gettering (880–920 °C) …”

Section: Resultsmentioning

confidence: 99%

Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Kivambe

Haschke

Horzel

et al. 2019

ACS Appl. Energy Mater.

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We report independently confirmed 22.15% and record 22.58% power conversion efficiencies, for thin (130 μm-140 μm) p-and n-type mono-like Si solar cells, respectively. We comparatively assessed advanced n-type and p-type mono-like silicon wafers for potential use in low-cost high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or ptype), wafer position in the ingot, drive-in temperature and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.

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“…Ever increasing requirements towards higher efficiencies have led to the development of new and innovative crystal growth technologies that provide better crystal quality and improved electrical properties. Currently the most promising technology is based on a simple and lowcost casting method, 15 % lower manufacturing cost compared to Cz-Si [1], resulting in high quality single crystalline silicon (cast mono-Si), also known as monolike, quasimono or mono 2 silicon [2,3,4,5]. Obviously the quality of cast mono-Si is not high enough for IC or high-purity detectors, but for instance, MEMS technology could find it as an attractive alternative to conventional Cz-Si, especially in applications where lower substrate cost could bring a significant competitive edge, such as disposable applications [6,7].…”

Section: Introductionmentioning

confidence: 99%

Cast Monocrystalline Silicon: New Alternative for Micro- and Nano-Electromechanical Systems?

Liu

Vähänissi

Chekurov³

et al. 2019

J. Microelectromech. Syst.

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Casted silicon wafers dominate the current photovoltaic (PV) market due to much lower fabrication costs as compared to well-known Czochralski (Cz)-growth. Traditionally casted silicon ingots have been multicrystalline, but recent developments in casting technology have enabled also the growth of single crystalline (sc) silicon ingots. While the resulting sc-Si ingot quality is naturally high enough for PV, it is not sufficient for the integrated circuit (IC) industry, mainly due to the increased amount of intrinsic point defects and dislocations in comparison to Cz-Si. However, many applications that do not have such stringent requirements for substrates, such as microand nano-electromechanical systems (MEMS, NEMS), could potentially find this material beneficial. Indeed, here we take the first step in studying the applicability of cast mono-Si for such applications. More specifically, we focus on advanced focused ion beam lithography combined with deep reactive ion etching for NEMS and wet etching for MEMS. Our results show that the quality of cast monoSi is high enough for successful patterning in both micro-and nanoscale. Sub-micron resolution is achieved and the Ga + doses required for successful patterning are comparable to conventional Cz-Si. The preliminary results presented here thus show great promise for cast mono-Si as a low-cost alternative for micro-and nanoelectromechanical systems.

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Electronic Quality Improvement of Highly Defective Quasi‐Mono Silicon Material by Phosphorus Diffusion Gettering

Cited by 10 publications

References 46 publications

Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering

Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering

Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Cast Monocrystalline Silicon: New Alternative for Micro- and Nano-Electromechanical Systems?

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