Electronic Size Effects in Three-Dimensional Nanostructures

Kowalczyk, P.J.; Mahapatra, Ojas; Brown, S. A.; Bian, Guang; Wang, X.; Chiang, T.‐C.

doi:10.1021/nl3033119

Cited by 53 publications

(82 citation statements)

References 27 publications

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“…(110) films. 19 The islands are elongated along the Bi[110] direction (which corresponds to the y-direction in Fig. 1(a)) with preferred periodic widths as a result of lateral quantum size effects.…”

Section: Resultsmentioning

confidence: 99%

“…1(a)) with preferred periodic widths as a result of lateral quantum size effects. 19 With increasing deposition of Bi, the islands connect and merge into a nonuniform film. The preferred thicknesses are consistent with our calculated bifurcation energies if the wetting AL is excluded.…”

Section: Resultsmentioning

confidence: 99%

“…By contrast, (110)-oriented Bi films are topologically trivial, 12 but this is the preferred or stable orientation when the film thickness is below a critical value that depends on the substrate material. 6,19,28 Prior studies have shown that epitaxial Bi(110) films exhibit a quasi-one-dimensional growth behavior and lateral quantum size effects. 19 The rich physics of Bi(110) films motivates the present study.…”

Section: Introductionmentioning

confidence: 99%

“…6,19,28 Prior studies have shown that epitaxial Bi(110) films exhibit a quasi-one-dimensional growth behavior and lateral quantum size effects. 19 The rich physics of Bi(110) films motivates the present study.…”

Section: Introductionmentioning

confidence: 99%

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First-principles and spectroscopic studies of Bi(110) films: Thickness-dependent Dirac modes and property oscillations

et al. 2014

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The electronic structure of Bi(110) thin films as a function of film thickness is investigated by first-principles calculations, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy. Energy minimization in the calculation reveals significant atomic relaxation and rebonding at the surface. The calculated surface energy for the relaxed structures indicates that films consisting of odd numbers of atomic layers are inherently unstable and tend to bifurcate into film domains consisting of neighboring even numbers of atomic layers. This theoretical trend agrees with experimental observations. The results can be explained by the presence of unsaturated p z dangling bonds on the surfaces of films of odd-numbered atomic layers only. These p z dangling bonds form a Dirac-cone feature near the Fermi level at the M point as a consequence of the interplay of mirror symmetry and spin-orbit coupling. Films consisting of even numbers of atomic layers exhibit a band gap at M instead.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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First-principles and spectroscopic studies of Bi(110) films: Thickness-dependent Dirac modes and property oscillations

et al. 2014

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“…The first-principles calculations are similar to those used to predict the band structure of α-Bi [32,35]. They were performed with ABINIT package within plane-wave expansion and pseudopotential framework.…”

Section: Methodsmentioning

confidence: 99%

Engineering multiple topological phases in nanoscale Van der Waals heterostructures: realisation of α-antimonene

et al. 2017

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Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologicallyinteresting states. Here we show that it is possible to create such heterostructures with multiple topological phases in a single nanoscale island. We discuss their growth within the framework of diffusion-limited aggregation, the formation of moiré patterns due to the differing crystallographies of the materials comprising the heterostructure, and the potential to engineer both the electronic structure as well as local variations of topological order. In particular we show that it is possible to build islands which include both the hexagonal β-and rectangular α-forms of antimonene, on top of the topological insulator α-bismuthene. This is the first experimental realisation of α-antimonene, and we show that it is a topologically non-trivial material in the quantum spin Hall class.

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Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer

Xiao

Wang

Yang

et al. 2018

Adv Funct Materials

198

125

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Ferroelectricity is usually found in compound materials composed by different elements. Here, based on first-principles calculations, we reveal the first example of spontaneous electrical polarization and ferroelectricity in stable two-dimensional elemental materials: elemental Group-V (As, Sb, and Bi) monolayers. The polarization is due to the spontaneous lattice distortion with atomic layer buckling.Interestingly, for Bi monolayer, apart from the ferroelectric phase, we find that it can also host an antiferroelectric phase. The Curie temperatures of these elemental materials can be higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest.

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Electronic Size Effects in Three-Dimensional Nanostructures

Cited by 53 publications

References 27 publications

First-principles and spectroscopic studies of Bi(110) films: Thickness-dependent Dirac modes and property oscillations

First-principles and spectroscopic studies of Bi(110) films: Thickness-dependent Dirac modes and property oscillations

Engineering multiple topological phases in nanoscale Van der Waals heterostructures: realisation of α-antimonene

Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer

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