Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer

Xiao, Chengcheng; Wang, Fang; Yang, Shengyuan A.; Lu, Yunhao; Feng, Yuanping; Zhang, Shou-Cheng

doi:10.1002/adfm.201707383

Cited by 200 publications

(139 citation statements)

References 39 publications

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“…Based on first-principles calculations, Xiao et al revealed robust in-plane ferroelectricity in a family of stable 2D elemental materialsthe monolayers of Group V elements As, Sb, and Bi. 30 These monolayers share similar structures which may be viewed as distorted phosphorene lattice structures with a vertical shift of atoms in each half-layer due to the reduced sp 3 hybridization as compared with P, as shown in Figure 1c. The distortion breaks centrosymmetry and generates a spontaneous in-plane electric polarization, which is robust with polarization values in the order of 10 −10 C/m, and the Curie temperatures estimated to be above room temperature.…”

Section: Intrinsic Ferroelectricity In Van Der Waals Layersmentioning

confidence: 89%

Progress and prospects in low‐dimensional multiferroic materials

Kan

2019

WIREs Comput Mol Sci

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Functional materials with ferroelectricity or multiferroicity based on two‐dimensional (2D) materials have been a fast developing field which attracts intensive investigations due to their potential applications and underlying new science. In this study, we review recent progress in theoretical simulation and experimental observation of low‐dimensional multiferroic materials, including exploring 2D van der Waals ferroelectrics, designing ferroelectrics or multiferroics by various manipulations such as chemical functionalization or external strain. The reported new physical mechanisms are also provided to explain the low‐dimensional multiferroics. We also discuss several exciting possibilities for design of devices based on these materials in novel applications. This article is categorized under: Structure and Mechanism > Computational Materials Science

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Section: Intrinsic Ferroelectricity In Van Der Waals Layersmentioning

confidence: 89%

Progress and prospects in low‐dimensional multiferroic materials

Kan

2019

WIREs Comput Mol Sci

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“…Among them, buckled (α‐form) and puckered (β‐form) lattices have been noted as most stable for all group V elements, although for arsenene, a γ‐form and a δ‐form has also been proposed. The puckered structure of the group V elemental 2D materials arsenene, bismuthene, and antimonene are predicted to exhibit ferroelectric (and even antiferroelectric in bismuthene) properties with Curie temperature above room temperature, an advancement that, if experimentally realized, would revolutionize the application space of elemental 2D materials . Of the group V elements, air stability remains a common issue.…”

Section: Crystal Allotropes Of Elemental 2d Materialsmentioning

confidence: 99%

“…The puckered structure of the group V elemental 2D materials arsenene, bismuthene, and antimonene are predicted to exhibit ferroelectric (and even antiferroelectric in bismuthene) properties with Curie temperature above room temperature, an advancement that, if experimentally realized, would revolutionize the application space of elemental 2D materials. [46] Of the group V elements, air stability remains a common issue. Phosphorene, the puckered or "black" phase, for instance, has been extensively investigated but remains highly susceptible to oxidation in air, making encapsulation schemes necessary.…”

Section: Crystal Allotropes Of Elemental 2d Materialsmentioning

confidence: 99%

Emerging Applications of Elemental 2D Materials

et al. 2019

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As elemental main group materials (i.e., silicon and germanium) have dominated the field of modern electronics, their monolayer 2D analogues have shown great promise for next‐generation electronic materials as well as potential game‐changing properties for optoelectronics, energy, and beyond. These atomically thin materials composed of single atomic variants of group III through group VI elements on the periodic table have already demonstrated exciting properties such as near‐room‐temperature topological insulation in bismuthene, extremely high electron mobilities in phosphorene and silicone, and substantial Li‐ion storage capability in borophene. Isolation of these materials within the postgraphene era began with silicene in 2010 and quickly progressed to the experimental identification or theoretical prediction of 15 of the 18 main group elements existing as solids at standard pressure and temperatures. This review first focuses on the significance of defects/functionalization, discussion of different allotropes, and overarching structure–property relationships of 2D main group elemental materials. Then, a complete review of emerging applications in electronics, sensing, spintronics, plasmonics, photodetectors, ultrafast lasers, batteries, supercapacitors, and thermoelectrics is presented by application type, including detailed descriptions of how the material properties may be tailored toward each specific application.

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“…In most cases of MRAMs, the energy cost depends mostly on the first term J for the exchange interaction of adjacent spins, which will be much reduced upon prolonged spin-spin distance (e.g., in diluted magnetic semiconductors [1] ) or when the number of adjacent spins N is reduced in low-dimensions. For example, ferroelectricity (FE) has been recently explored in many 2D materials and revealed to be robust at ambient conditions, [2][3][4][5][6][7][8][9][10][11][12][13][14][15] as summarized in our recent review. As a result, a high Curie temperature can still be maintained when the number of adjacent dipoles is reduced.…”

mentioning

confidence: 99%

Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories

Yang

Zhong

et al. 2018

Advanced Science

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It is known that an isolated single‐molecule magnet tends to become super‐paramagnetic even at an ultralow temperature of a few Kelvin due to the low spin switching barrier. Herein, single‐molecule ferroelectrics/multiferroics is proposed, as the ultimate size limit of memory, such that every molecule can store 1 bit data. The primary strategy is to identify polar molecules that possess bistable states, moderate switching barriers, and polarizations fixed along the vertical direction for high‐density perpendicular recording. First‐principles computation shows that several selected magnetic metal porphyrin molecules possess buckled structures with switchable vertical polarizations that are robust at ambient conditions. When intercalated within a bilayer of 2D materials such as bilayer MoS2 or CrI3, the magnetization can alter the spin distribution or can be even switched by 180° upon ferroelectric switching, rendering efficient electric writing and magnetic reading. It is found that the upper limit of areal storage density can be enhanced by four orders of magnitude, from the previous super‐paramagnetic limit of ≈40 to ≈106 GB in.−2, on the basis of the design of cross‐point multiferroic tunneling junction array and multiferroic hard drive.

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Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer

Cited by 200 publications

References 39 publications

Progress and prospects in low‐dimensional multiferroic materials

Progress and prospects in low‐dimensional multiferroic materials

Emerging Applications of Elemental 2D Materials

Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories

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