Electronic states and oscillator strengths for interband transitions of a graded quantum dot quantum well structure

Bochorishvili, Beka

doi:10.1016/j.physe.2010.11.003

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…In the last decade, there has been a steady increase in theoretical research and experimental work on various core-shell structure semiconductor nanocrystals, which may make up a quantum dot quantum well (QDQW) nanostructure. This has been carried out by means of theoretical and experimental methods such as the finite element method, 1 linear and branched topology, 2 and photoluminescence. [3][4][5][6] The interest in these nanostructures is due to their unique electrical, optical, and transport characteristics as compared with conventional materials, including two-and one-dimensional nanomaterials.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport in quantum dot quantum well microstructures of the self-assembled CdTe/CdS/ligand core–shell system

Shan

Zhu

et al. 2015

Nanoscale

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The study on the quantum dot quantum well (QDQW) microstructure modified by choosing different ligands containing a sulfhydryl group is of significance because it enables one to regulate photoexcited free charge carriers' (FCCs') transport behaviours in high-quality CdTe/ligand QDs via a self-assembled way. The photoelectron characteristics of ligand-capped CdTe nanoparticles were probed by a combination of surface photovoltaic (SPV) and photoacoustic technologies, supplemented by a computer simulation method of the CASTEP module. The experiment reveals that the D-value ΔEWi obtained by the associated two parameters of the SPV spectroscopy was closely related to the quantum confinement energy in the self-assembled CdTe/CdS/ligand core-shell system. In the paper the D-value was termed the depth of QWs, which were buried in the space charge regions located in the graded-band-gap and on either side of the shell-CdS. Obvious resonance quantum tunnelling may occur in the energy band structure with deep QWs on using certain ligands, resulting in an extended diffusion length of the FCCs on illumination of the photon energy hν ≥ Eg, core-CdTe, and in a strong SPV response at a specific wavelength region. In addition, the carrier-longitudinal optical phonon interaction is the reciprocal of the carriers' lifetime. The d-frontier orbital in the graded-band-gap plays an important role in both the microstructure and the resonance quantum tunnelling of the QDQW system according to the CASTEP calculations.

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Section: Introductionmentioning

confidence: 99%

Carrier transport in quantum dot quantum well microstructures of the self-assembled CdTe/CdS/ligand core–shell system

Shan

Zhu

et al. 2015

Nanoscale

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Fine-tuning a few nonlinear optical properties of doped GaAs quantum dot by spatial spread of impurity under the aegis of noise

Bhakti,

Datta,

Ghosh

2024

Indian J Phys

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Theoretical investigation of some parameters into the behavior of quantum dot solar cells

Nasr

Aly

2014

J. Semicond.

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The main goal of this paper is to determine the accurate values of two parameters namely the surface generation—recombination rate and the average total number of electrons density generated in the i-region. These values will enhance the performance of quantum dot solar cells (QDSCs). In order to determine these values, this paper concentrates on the optical generation lifetime, the recombination lifetime, and the effective density state in QDs. Furthermore, these parameters are studied in relation with the average total number of electrons density. The values of the surface generation—recombination rate are found to be negative, which implies that the generation process is dominant in the absorption quantum dot region. Consequently, induced photocurrent density relation with device parameters is determined. The results ensure that QDSCs can have higher response photocurrent and then improve the power conversion efficiency. Moreover, the peak value of the average total number of electrons density is achieved at the UV range and is extended to the visible range, which is adequate for space and ground solar applications.

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Electronic states and oscillator strengths for interband transitions of a graded quantum dot quantum well structure

Cited by 3 publications

References 23 publications

Carrier transport in quantum dot quantum well microstructures of the self-assembled CdTe/CdS/ligand core–shell system

Carrier transport in quantum dot quantum well microstructures of the self-assembled CdTe/CdS/ligand core–shell system

Fine-tuning a few nonlinear optical properties of doped GaAs quantum dot by spatial spread of impurity under the aegis of noise

Theoretical investigation of some parameters into the behavior of quantum dot solar cells

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