Electronic states at the interface between thin films of ZnS and crystalline p-silicon

Abstract

Thin films of zinc sulfide have been evaporated onto p−-p+ silicon substrates and metal-insulator-semiconductor diodes fabricated. Capacitance-voltage characteristics have been analyzed qualitatively and quantitative measurement of the density of interface states has been made using the conductance technique developed by Nicollian and Goetzberger [Bell Syst. Tech. J. 46, 1055 (1967)]. Similarities between this interface and that between sputtered zinc sulfide are noted. A model is developed to explain the high densities of interface states observed (≥1012 cm−2 eV−1) and the suitability of these films for use in electroluminescent devices is discussed.

Study of the Si/ZnS Multilayer System for Optoelectronic Applications

“…The future development of Si-based integrated optics [1] rests upon the experimental synthesis of new lattice-matched heterostructures such as the (001) Si/ZnS multiple quantum well (MQW) system [2,3]. The only previous theoretical study appears to be of the interband properties of (110)-grown Si/ZnS superlattices [4,5].…”