2003
DOI: 10.1103/physrevb.67.153403
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Electronic states of epitaxial thin films ofLa0.9Sn0.1MnO3

Abstract: Structure, transport properties, and electronic structure of epitaxial thin films La 0.9 Sn 0.1 MnO 3 and La 0.9 Ca 0.1 MnO 3 have been experimentally studied. According to the Hall-effect measurement, La 0.9 Sn 0.1 MnO 3 is an n-type conductor in the metallic state due to the substitution of Sn for La. X-ray photoelectron spectroscopy spectra revealed a shift of the Fermi level and the Mn ionic core level of La 0.9 Sn 0.1 MnO 3 in comparison with La 0.9 Ca 0.1 MnO 3. The difference between the Mn-2p spectra o… Show more

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Cited by 51 publications
(30 citation statements)
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“…These two peaks are very close to those of the 2p 3/2 and 2p 1/2 states of MnO (2p 3/2 ∼ 640.6 and 2p 1/2 ∼ 652.2 eV). 22 Furthermore, we observe the formation of shake-up satellites, which are offset from the main peaks of the Mn 2p doublet 184402-2 by approximately 5 eV toward higher binding energies. This behavior is typical for Mn 2+ systems.…”
Section: A Structural and Chemical Characterizationsmentioning
confidence: 76%
“…These two peaks are very close to those of the 2p 3/2 and 2p 1/2 states of MnO (2p 3/2 ∼ 640.6 and 2p 1/2 ∼ 652.2 eV). 22 Furthermore, we observe the formation of shake-up satellites, which are offset from the main peaks of the Mn 2p doublet 184402-2 by approximately 5 eV toward higher binding energies. This behavior is typical for Mn 2+ systems.…”
Section: A Structural and Chemical Characterizationsmentioning
confidence: 76%
“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] As to the hole doping in the parent compound LaMnO 3 , a proportionate amount of Mn 3+ with the electronic configuration of t 2g 3 e g 1 is replaced by Mn 4+ resulting in holes in the e g band. The holes permit charge transport in the e g band, inducing ferromagnetism through double exchange interaction between Mn 3+ and Mn 4+ .…”
Section: Introductionmentioning
confidence: 99%
“…The holes permit charge transport in the e g band, inducing ferromagnetism through double exchange interaction between Mn 3+ and Mn 4+ . On the other hand, recent attempts to create electron-doped manganites with the t 2g 3 e g 2 and t 2g 3 e g 1 electronic configuration by doping tetravalent cations, including Ce, 2-5 Sn, 6 and Te, 7 have attracted attention since the first report by Mandal and Das. 2 The realization of such electron-doped manganites is very interesting not only for fundamental physics in the context of the emergence of ferromagnetism in that electronic configuration 8 but also for the device application, e.g., the p-n homojunctions of both holeand electron-doped manganites would be possible and promising for unique functional spintronic devices in future.…”
Section: Introductionmentioning
confidence: 99%
“…Despite the extensive achievement in the hole-doped manganites, much attention has been focused on electron-doped manganites due to their unusual properties and potential applications. If the doping element is a tetravalent cation, such as Ce, Sn, and Te, the doping cation will lead to the valence state of Mn from Mn 3+ in the parent compound to a mixed-valence state of Mn 3+ and Mn 2+ [8]. The system has an intrinsic symmetry since Mn 2+ and Mn 4+ are both non-Jahn-Teller ions whereas Mn 3+ is a Jahn-Teller ion.…”
Section: Introductionmentioning
confidence: 97%