Electronic states tuning of InAs self-assembled quantum dots

Garcı́a, J.M.; Mankad, Tanaya; Holtz, Per-Olof; Wellman, P. J.; Petroff, P. M.

doi:10.1063/1.121583

Cited by 155 publications

(90 citation statements)

References 15 publications

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“…[17][18][19][20][21] The quantum rings are of much interest due to their electronic properties such as the large and negative excitonic permanent dipole moments, 9 the high oscillator strength of the band-to-band ground state transition, 10 and the possibility to tune their electronic states. 11 Initially, it was not clear whether the electronic structure inside the ring shaped nanostructures is indeed ring-like. 7,12 However, subsequent studies of their magnetic properties provided decisive evidence for the ring-like electronic structures.…”

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confidence: 99%

“…Since first observed, the ring shaped nano-structures were extensively studied experimentally [7][8][9][10][11][12][13][14][15][16] and theoretically. [17][18][19][20][21] The quantum rings are of much interest due to their electronic properties such as the large and negative excitonic permanent dipole moments, 9 the high oscillator strength of the band-to-band ground state transition, 10 and the possibility to tune their electronic states.…”

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confidence: 99%

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Formation of InAs self-assembled quantum rings on InP

Raz

Ritter

Bahir

2003

Applied Physics Letters

122

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Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy (AFM) images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms.

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confidence: 99%

mentioning

confidence: 99%

Formation of InAs self-assembled quantum rings on InP

Raz

Ritter

Bahir

2003

Applied Physics Letters

122

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“…As a model system a square-lattice PCM geometry with one missing air hole (S1) has been chosen, which is known to confine the fundamental mode in the proximity of the air-semiconductor interface [13]. A single layer of selfassembled InAs QDs was embedded in the 180 nm thick GaAs membrane and emits around 950 nm [14] under non-resonant laser excitation at 780 nm. Figure 1a shows a spectrum of the fundamental cavity mode taken at pump powers of 15 µW, which has been recorded with a micro photoluminescence (micro-PL) setup [15].…”

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confidence: 99%

Frequency control of photonic crystal membrane resonators by monolayer deposition

Strauf

Rakher

Carmeli

et al. 2006

Applied Physics Letters

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We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to intentionally shift the cavity resonance frequency, we studied the effect of self-assembled monolayers of polypeptide molecules attached to the membranes. The 2 nm thick monolayers lead to a discrete step in the resonance frequency and partially passivate the surface.Photonic crystal membrane microcavities (PCM) are promising candidates for applications ranging from quantum and classical communication [1], to microlasers [2,3] and sensing devices [4,5]. Due to their ultra small mode volumes [6] and large surface to volume ratio, the PCM resonant frequency is highly sensitive to its environment. While this sensitivity may be exploited for novel sensing applications, it complicates solid-state cavity quantum electrodynamic (QED) experiments that depend on a precise resonance condition between a cavity mode and an embedded single quantum dot (QD) [7,8,9, 10], single atom [11] or single impurity [12]. This paper describes a slow red-shift of the PCM mode emission frequency that can occur at low operation temperatures. We ascribe this shift to molecular condensation on the PCM surface. We further describe methods used to fully curtail the drift, and in addition, we report on the first demonstration of a controlled red-shift of the PCM mode by the adsorption of a self-assembled monolayer (SAM) of polypeptide molecules.We are particularly interested in PCM devices operated at low temperatures in such a way that embedded QDs display a discrete energy spectrum. As a model system a square-lattice PCM geometry with one missing air hole (S1) has been chosen, which is known to confine the fundamental mode in the proximity of the air-semiconductor interface [13]. A single layer of selfassembled InAs QDs was embedded in the 180 nm thick GaAs membrane and emits around 950 nm [14] under non-resonant laser excitation at 780 nm. Figure 1a shows a spectrum of the fundamental cavity mode taken at pump powers of 15 µW, which has been recorded with a micro photoluminescence (micro-PL) setup [15]. At these excitation conditions the cavity mode is clearly visible at 1.3293 eV with a quality factor (Q-factor) of 1900. The 2 µm diameter laser excitation spot has to be positioned with an accuracy of ±0.5 µm with respect to the cavity defect region (Fig. 1c), demonstrating the strongly localized character of the mode. Individual QD transitions are visible under low pump power excitation of 50 nW, which have been identified by their pronounced antibunching signature (not shown). Another set of two spectra was taken 200 min later as shown in Fig. 1b. While the single QD emission energy at 1.31780 ± 2 · 10 −5 eV did not change in the entire observation perio...

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“…[49], we fix the excitation energy of the top QD to E10 10 X = 1.587 eV. The energy of the bottom QD can be precisely controlled experimentally by tuning its chemical or structural parameters [24,25,49]. As reported in Ref.…”

Section: A Energy Levels and Mutual Couplings In Cqdsmentioning

confidence: 99%

“…The energy levels and mutual electronic and excitonic couplings between the dots can be finely tuned by engineering their structure and by carefully controlling the interdot distance [22][23][24][25]. The possibility to apply an electric field along the dimer [26,27] using an external gate voltage adds a supplementary means to control these energy levels [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Cooperative biexciton generation and destructive interference in coupled quantum dots using adiabatic rapid passage

Renaud

Grozema

2014

Phys. Rev. B

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We report numerical simulations of biexciton generation in coupled quantum dots (CQDs) placed in a static electric field and excited by a chirped laser pulse. Our simulations explicitly account for exciton-phonon interactions at finite temperature using a non-Markovian quantum jump approach to solve the excitonic dynamics. In the case of noninteracting quantum dots, the biexciton generation is severely limited by the biexciton binding energy. We demonstrate that the application of an axial electric field along the CQDs can yield a favorable excitonic level alignment that compensates for the biexciton binding energy and yields an optimum biexciton generation. On the contrary, well-defined values of the electric field lead to destructive quantum interference that completely inhibits the biexciton generation. We therefore demonstrate here the potential of chirped pulse excitations of CQDs for high-efficiency biexciton generation but also for the control of unique optoelectronic properties of complex quantum systems.

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Electronic states tuning of InAs self-assembled quantum dots

Cited by 155 publications

References 15 publications

Formation of InAs self-assembled quantum rings on InP

Formation of InAs self-assembled quantum rings on InP

Frequency control of photonic crystal membrane resonators by monolayer deposition

Cooperative biexciton generation and destructive interference in coupled quantum dots using adiabatic rapid passage

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